| Home | << 1 >> |
|
| Record | |||||
|---|---|---|---|---|---|
| Author | Hofer, J.A.; Ginzburg, M.; Bengio, S.; Haberkorn, N. | ||||
| Title | Nanocrystalline superconducting γ-Mo2N ultra-thin films for single photon detectors | Type | Journal Article | ||
| Year | 2022 | Publication  |
Materials Science and Engineering: B | Abbreviated Journal | Materials Science and Engineering: B |
| Volume | 275 | Issue | Pages | 115499 | |
| Keywords | |||||
| Abstract | We analyze the influence of the surface passivation produced by oxides on the superconducting properties of γ-Mo2N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo2N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time ≈ 45 ps. This value is promising for its applications in single-photon detectors. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-5107 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | BT @ pedrazp @ | Serial | 871 | ||
| Permanent link to this record | |||||