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Author (up) Haberkorn, N.; Bengio, S.; Suárez, S.; Pérez, P.D.; Hofer, J.A.; Sirena, M. url  openurl
  Title Effect of thermal annealing and irradiation damage on the superconducting critical temperature of nanocrystalline γ-Mo2N thin films Type Journal Article
  Year 2019 Publication Materials Letters Abbreviated Journal  
  Volume 236 Issue Pages 252-255  
  Keywords Nitrides; Sputtering; Superconductivity; Irradiation  
  Abstract We report on the influence of the disorder and stoichiometry in the resulting superconducting critical temperature of γ-Mo2N thin films. Initially, three films (with Tc values of 7.6 K, 6.8 K and 6 K) were grown at room temperature by reactive sputtering, on Si (1 0 0) using different N2/(Ar+N2) mixtures. The influence of the thermal annealing up to 973 K and irradiation damage produced by 1 MeV Zr+(fluence up 2 × 1014 cm−2) is analyzed. The Tc of pristine films remains unchanged for increasing irradiation doses up 2 × 1014 cm−2. The Tc for annealed films decreases close to the value expected for bulk samples (≈5 K) for increasing the annealing temperature. Successive irradiations of the annealed films tend to increase their Tc up to its initial values (before annealing). The results indicate that the Tc in nanometric grain size γ-Mo2N thin films is affected by both nitrogen stoichiometry and disorder at the atomic scale.  
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  ISSN 0167-577x ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 850  
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Author (up) Haberkorn, N.; Bengio, S.; Suárez, S.; Pérez, P.D.; Sirena, M.; Guimpel, J. url  openurl
  Title Effect of the nitrogen-argon gas mixtures on the superconductivity properties of reactively sputtered molybdenum nitride thin films Type Journal Article
  Year 2018 Publication Materials Letters Abbreviated Journal Materials Letters  
  Volume 215 Issue Pages 15-18  
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  Notes Cited By :1; Export Date: 14 March 2018 Approved no  
  Call Number BT @ jguimpel @ Serial 783  
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Author (up) Haberkorn, N.; Bengio, S.; Troiani, H.; Suárez, S.; Pérez, P.D.; Granell, P.; Golmar, F.; Sirena, M.; Guimpel, J. url  openurl
  Title Thickness dependence of the superconducting properties of γ- Mo<inf>2</inf>N thin films on Si (001) grown by DC sputtering at room temperature Type Journal Article
  Year 2018 Publication Materials Chemistry and Physics Abbreviated Journal Mater. Chem. Phys  
  Volume 204 Issue Pages 48-57  
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  Notes Cited By :1; Export Date: 14 March 2018 Approved no  
  Call Number BT @ jguimpel @ Serial 785  
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Author (up) Hofer, J.A.; Bengio, S.; Rozas, G.; Pérez, P.D.; Sirena, M.; Suárez, S.; Haberkorn, N. url  doi
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  Title Compositional effects on the electrical properties of extremely disordered molybdenum oxynitrides thin films Type Journal Article
  Year 2020 Publication Materials Chemistry and Physics Abbreviated Journal Mater. Chem. Phys.  
  Volume 242 Issue Pages 122075  
  Keywords Molybdenum; Oxynitrides; Thin films; Sputtering; Electrical transport  
  Abstract Molybdenum oxynitride (MoNxOy) thin films were grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90%, and the remaining 10% was adjusted with mixtures N2:O2 (varying from pure N2 to pure O2). The electrical properties of the films depend on the chemical composition. Thin films grown using mixtures up to 2% O2 have γ-Mo2N phase and display superconductivity. The superconducting critical temperature Tc reduces from ∼6.8 K to below 3.0 K as the oxygen increases. On the other hand, the films are mostly amorphous for gas mixtures above 2% O2. The electrical conductivity shows a semiconductor-like behavior well described by variable-range hopping conduction. The analysis of the optical properties reveals that the samples do not have a defined semiconductor bandgap, indicating that the high structural disorder produces electron excitation for a wide range of energies.  
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  ISSN 0254-0584 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 860  
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Author (up) Hofer, J.A.; Ginzburg, M.; Bengio, S.; Haberkorn, N. url  doi
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  Title Nanocrystalline superconducting γ-Mo2N ultra-thin films for single photon detectors Type Journal Article
  Year 2022 Publication Materials Science and Engineering: B Abbreviated Journal Materials Science and Engineering: B  
  Volume 275 Issue Pages 115499  
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  Abstract We analyze the influence of the surface passivation produced by oxides on the superconducting properties of γ-Mo2N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer and a capping layer of AlN are compared. The results show that the cover layer avoids the presence of surface oxides, maximizing the superconducting critical temperature for films with thicknesses of a few nanometers. We characterize the flux-flow instability measuring current-voltage curves in a 6.4 nm thick Mo2N film with a superconducting critical temperature of 6.4 K. The data is analyzed using the Larkin and Ovchinnikov model. Considering self-heating effects due to finite heat removal from the substrate, we determine a fast quasiparticle relaxation time ≈ 45 ps. This value is promising for its applications in single-photon detectors.  
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  ISSN 0921-5107 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 871  
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