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Abstract |
Channel-spark pulsed electron beam deposition (CS), a new deposition method based on a simple and inexpensive system, has been used for preparation of high-quality GdBa2Cu3O7-x, Gd1-xEuxBa2Cu3O7-x and YBa2Cu3O7-x thin films epitaxially grown on NdGaO3 and SrTiO3 substrates. Typical critical temperatures for zero DC resistance lie in the intervals 87-89 K for Y-based films and 91.0-92.6 K for Gd- and GdEu-based ones. The transition widths for the best films are less than 0.5 K. The critical current densities reach the values of 3*106 A cm-2 at 77 K, zero field. |
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