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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume Issue Pages 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Call Number BT @ pedrazp @ Serial 841
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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Call Number BT @ pedrazp @ Serial 839
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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Call Number BT @ pedrazp @ Serial 835
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Author (up) Galimberti, C.L.; Alcalde Bessia, F.; Perez, M.; Gómez Berisso, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Asorey, H.; Lipovetzky, J.
Title A Low Cost Environmental Ionizing Radiation Detector Based on COTS CMOS Image Sensors Type Conference Article
Year 2018 Publication 2018 IEEE Biennial Congress of Argentina (ARGENCON) Abbreviated Journal
Volume Issue Pages 1-6
Keywords CMOS image sensors; particle detectors; radiation detection; low cost environmental ionizing radiation detector; COTS CMOS image sensors; geometrical characteristics; alpha particles; radiation sources; Raspberry Pi3 computer; Omnivision OV5647 commercial off the shelf image sensor; X-ray photon; gamma photons; OpenCV library; size 241.0 am; Detectors; Software; Image sensors; Alpha particles; Prototypes; Silicon; Image color analysis
Abstract We present the development of a system for the detection of ionizing radiation based on the Omnivision OV5647 Commercial Off The Shelf image sensor. The data is read and processed in real-time using a Raspberry Pi 3 computer. The amount of charge and geometrical characteristics of the cluster of pixels exited when a particle interacts with the sensor is recorded and used to identify the type of incoming particle, distinguishing between alpha particles and X-ray or gamma photons. The software was programmed in C using the OpenCV library. The system was tested with 137Cs and 241Am radiation sources.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Biennial Congress of Argentina (ARGENCON)
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Call Number BT @ pedrazp @ Serial 836
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Author (up) Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Gómez Berisso, M.
Title Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal
Volume 167 Issue Pages 108244
Keywords CMOS image detectors; Ionizing radiation; X-rays; Imaging
Abstract In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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Series Editor Series Title Abbreviated Series Title
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ISSN 0969-806x ISBN Medium
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Notes Approved no
Call Number BT @ pedrazp @ Serial 838
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Author (up) Pérez, M.; Haro, M.S.; Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Alcade Bessia, F.; Gómez Berisso, M.; Blostein, J.J.
Title Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal Rad. Phys. Chem.
Volume 177 Issue Pages 109062
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Abstract We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines.
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ISSN 0969806X ISBN Medium
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Notes Approved no
Call Number BT @ pedrazp @ Serial 868
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Author (up) Pérez, M.; Lipovetzky, J.; Sofo Haro, M.; Sidelnik, I.; Blostein, J. J.; Alcalde Bessia, F.; Gómez Berisso, M.
Title Particle detection and classification using commercial off the shelf CMOS image sensors Type Journal Article
Year 2016 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 827 Issue Pages 171
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Call Number BT @ pedrazp @ Serial 754
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Author (up) Pérez, M.; Martínez, E.D.; Lipovetzky, J.; Marín, J.; Sofo Haro, M.; Alcalde Bessia, F.; Gómez Berisso, M.; Blostein, J.J.
Title High spatial resolution neutron detection technique based on Commercial Off-The-Shelf CMOS image sensors covered with NaGdF_4 nanoparticles Type Journal Article
Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Inst.
Volume 16 Issue Pages P08008
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Abstract We present a position-sensitive neutron detection technique based on a Commercial Off-The-Shelf CMOS image sensor (CIS) covered with nanoparticles of sodium gadolinium fluoride (NaGdF4). The synthesis procedure and characterization of the NaGdF4 nanoparticles are detailed, as well as the deposition method of the conversion layers over the surface of the chips. We also present a manufacture method of test patterns made with neutron-absorbing materials. These patterns were designed to evaluate the performance of the proposed technique. Analyzing the obtained neutron images we conclude that the intrinsic spatial resolution of the developed method is better than (15±6) μm, this upper bound for the spatial resolution is comparable with that obtained with the best neutron position-sensitive detectors available nowadays.
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Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
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Notes Approved no
Call Number BT @ pedrazp @ Serial 869
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Author (up) Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Tozzi, L.; Rondón Brito, D.; Mora, C.; Blostein, J.J.; Gómez Berisso, M.; Lipovetzky, J.
Title Commercial CMOS Pixel Array for Beta and Gamma Radiation Particle Counting Type Journal Article
Year 2015 Publication IEEE, Micro-Nanoelectronics, Technology and Applications (EAMTA) Abbreviated Journal
Volume Issue Pages 11
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Call Number BT @ pedrazp @ Serial 752
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Author (up) Sereni, J.G.; Caroca-Canales, N.; Kumar, M.; Oeschler, N.; Gómez Berisso, M.; Geibel, C.
Title CeRuGe and CeRuSi: Heavy fermion systems with some unusual features Type Journal Article
Year 2010 Publication Journal of Physics: Conference Series Abbreviated Journal
Volume 200 Issue 1 Pages 012181
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Abstract We have investigated the physical properties of CeRuSi, its homologue CeRuGe and some doped La alloys. All of them present similar properties: large paramagnetic temperatures θp ##IMG## [http://ej.iop.org/icons/Entities/approx.gif] {approx} −100 K and the level off of χ( T ) below ##IMG## [http://ej.iop.org/icons/Entities/approx.gif] {approx} 10 K in coincidence with the maximum decrease of p ( T ), which starts to drop below 25 K. The respective γ ( CeRuSi ) ##IMG## [http://ej.iop.org/icons/Entities/approxeq.gif] {approxeq} 0.18 and γ ( CeRuGe ) ##IMG## [http://ej.iop.org/icons/Entities/approxeq.gif] {approxeq} 0.15 J/molK 2 coefficients reveal a heavy fermion character, with a Kondo temperature T K ##IMG## [http://ej.iop.org/icons/Entities/approxeq.gif] {approxeq} 50 K comparable to the crystal field splitting. In both compounds a broad maximum in C P ( T )/ T is observed around 5 K, whose origin is yet not clear. In contrast to the usual behavior observed in Kondo lattice systems, when Si is replaced by Ge T K ##IMG## [http://ej.iop.org/icons/Entities/propto.gif] {propto} θ p and 1/γ practically does not decreases despite the unit cell volume of CeRuGe is about 3% larger than that of CeRuSi. We discuss possible origins for these unusual features.
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ISSN 1742-6596 ISBN Medium
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Notes Approved no
Call Number BT @ berisso @ Serial 597
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