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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume (down) Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 839
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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume (down) Issue Pages 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 841
Permanent link to this record