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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume Issue Pages 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Call Number BT @ pedrazp @ Serial 841
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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Call Number BT @ pedrazp @ Serial 839
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Author (up) Alcalde Bessia, F.; Pérez, M.; Gomez Berisso, M.; Piunno, N.; Mateos, H.; Pomiro, F.J.; Sidelnik, I.; Blostein, J.J.; Sofo Haro, M.; Lipovetzky, J.
Title X-ray micrographic imaging system based on COTS CMOS sensors Type Conference Article
Year 2017 Publication 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Abbreviated Journal
Volume Issue Pages 1-4
Keywords biological techniques; biology computing; CMOS image sensors; image processing equipment; X-ray imaging; X-ray image acquisition; X-ray micrographic imaging system; Commercial Off The Shelf CMOS image sensors; biology; paleontology research; scintillator conversion layers; electronic components inspection; COTS CMOS sensors; electron volt energy 8.0 keV; Photonics; X-ray imaging; Silicon; Attenuation; Detectors; Image sensors; Cmos; Vlsi; X-ray applications; Biomedical imaging; CMOS image sensors
Abstract This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers.
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Series Editor Series Title Abbreviated Series Title 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)
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Call Number BT @ pedrazp @ Serial 831
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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Call Number BT @ pedrazp @ Serial 835
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Author (up) Benfica, J.; Green, B.; Porcher, B.C.; Bolzani Poehls, L.; Vargas, F.; Medina, N.H.; Added, N.; de Aguiar, V.A.P.; Macchione, E.L.A.; Aguirre, F.; Silveira, M.A.G.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Lipovetzky, J.; Bezerra, E.A.
Title Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects Type Journal Article
Year 2016 Publication IEEE Transactions on Nuclear Science Abbreviated Journal
Volume 63 Issue Pages 1294
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Call Number BT @ pedrazp @ Serial 753
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Author (up) Galimberti, C.L.; Alcalde Bessia, F.; Perez, M.; Gómez Berisso, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Asorey, H.; Lipovetzky, J.
Title A Low Cost Environmental Ionizing Radiation Detector Based on COTS CMOS Image Sensors Type Conference Article
Year 2018 Publication 2018 IEEE Biennial Congress of Argentina (ARGENCON) Abbreviated Journal
Volume Issue Pages 1-6
Keywords CMOS image sensors; particle detectors; radiation detection; low cost environmental ionizing radiation detector; COTS CMOS image sensors; geometrical characteristics; alpha particles; radiation sources; Raspberry Pi3 computer; Omnivision OV5647 commercial off the shelf image sensor; X-ray photon; gamma photons; OpenCV library; size 241.0 am; Detectors; Software; Image sensors; Alpha particles; Prototypes; Silicon; Image color analysis
Abstract We present the development of a system for the detection of ionizing radiation based on the Omnivision OV5647 Commercial Off The Shelf image sensor. The data is read and processed in real-time using a Raspberry Pi 3 computer. The amount of charge and geometrical characteristics of the cluster of pixels exited when a particle interacts with the sensor is recorded and used to identify the type of incoming particle, distinguishing between alpha particles and X-ray or gamma photons. The software was programmed in C using the OpenCV library. The system was tested with 137Cs and 241Am radiation sources.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Biennial Congress of Argentina (ARGENCON)
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Notes Approved no
Call Number BT @ pedrazp @ Serial 836
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Author (up) Lipovetzky, J.; Alcalde Bessia, F.; Guimpel, J.; Perez, M.; Gomez Berisso, M.
Title Characterization of a low-power CMOS operational amplifier from 12.5K to 273K for low temperature experiments Type Conference Article
Year 2020 Publication 2020 Argentine Conference on Electronics (CAE) Abbreviated Journal
Volume Issue Pages 73-76
Keywords Low temperature; CMOS; Operational Amplifier
Abstract In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curves of n-channel and p-channel MOS transistors, resistors and the amplifier response were measured. The circuit allows the amplification of signals up to 100kHz with a power consumption of 48μW.
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Corporate Author Thesis
Publisher IEEE Place of Publication Editor
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Area Expedition Conference 2020 Argentine Conference on Electronics (CAE)
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Call Number BT @ pedrazp @ Serial 864
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Author (up) Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Gómez Berisso, M.
Title Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal
Volume 167 Issue Pages 108244
Keywords CMOS image detectors; Ionizing radiation; X-rays; Imaging
Abstract In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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ISSN 0969-806x ISBN Medium
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Notes Approved no
Call Number BT @ pedrazp @ Serial 838
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Author (up) Mateos, H.; Lipovetzky, J.; Alcalde Bessia, F.; Perez, M.; Cappagli, P.; Gomez Berisso, M.
Title Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy Type Conference Article
Year 2017 Publication 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE) Abbreviated Journal
Volume Issue Pages 1-6
Keywords biomedical measurement; dosimeters; dosimetry; photodetectors; photodiodes; radiation therapy; photodetectors array; sensor characterization; Commercial Of The Shelf photodiodes; 1D dosimeter array; dose spatial distribution; radiotherapy irradiation field; teletherapy source; gamma rays; beam profile measurements; dose resolution; acquisition electronics; radiation absorbed dose 0.06 cGy; Photodiodes; Sensitivity; Current measurement; Detectors; Radiation effects; Voltage measurement; Multiplexing; Radiotherapy; Ionizing Radiation; Photodiodes; Quality Assurance.
Abstract In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.
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Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)
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Notes Approved no
Call Number BT @ pedrazp @ Serial 832
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Author (up) Pérez Quintián, F.; Calarco, N.; Lutenberg, A.; Lipovetzky, J.
Title Performance of an optical encoder based on a nondiffractive beam implemented with a specific photodetection integrated circuit and a diffractive optical element Type Journal Article
Year 2015 Publication Applied Optics Abbreviated Journal
Volume 54 Issue Pages 7240
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Call Number BT @ pedrazp @ Serial 761
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