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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume Issue Pages 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Call Number BT @ pedrazp @ Serial 841
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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Call Number BT @ pedrazp @ Serial 839
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Author (up) Alcalde Bessia, F.; Pérez, M.; Gomez Berisso, M.; Piunno, N.; Mateos, H.; Pomiro, F.J.; Sidelnik, I.; Blostein, J.J.; Sofo Haro, M.; Lipovetzky, J.
Title X-ray micrographic imaging system based on COTS CMOS sensors Type Conference Article
Year 2017 Publication 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Abbreviated Journal
Volume Issue Pages 1-4
Keywords biological techniques; biology computing; CMOS image sensors; image processing equipment; X-ray imaging; X-ray image acquisition; X-ray micrographic imaging system; Commercial Off The Shelf CMOS image sensors; biology; paleontology research; scintillator conversion layers; electronic components inspection; COTS CMOS sensors; electron volt energy 8.0 keV; Photonics; X-ray imaging; Silicon; Attenuation; Detectors; Image sensors; Cmos; Vlsi; X-ray applications; Biomedical imaging; CMOS image sensors
Abstract This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers.
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Series Editor Series Title Abbreviated Series Title 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)
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Call Number BT @ pedrazp @ Serial 831
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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Call Number BT @ pedrazp @ Serial 835
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Author (up) Benfica, J.; Green, B.; Porcher, B.C.; Bolzani Poehls, L.; Vargas, F.; Medina, N.H.; Added, N.; de Aguiar, V.A.P.; Macchione, E.L.A.; Aguirre, F.; Silveira, M.A.G.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Lipovetzky, J.; Bezerra, E.A.
Title Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects Type Journal Article
Year 2016 Publication IEEE Transactions on Nuclear Science Abbreviated Journal
Volume 63 Issue Pages 1294
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Call Number BT @ pedrazp @ Serial 753
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Author (up) Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Gómez Berisso, M.
Title Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal
Volume 167 Issue Pages 108244
Keywords CMOS image detectors; Ionizing radiation; X-rays; Imaging
Abstract In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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ISSN 0969-806x ISBN Medium
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Call Number BT @ pedrazp @ Serial 838
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Author (up) N. Haberkorn, S. Bengio, H. Troiani, S. Suárez, P. D. Pérez, M. Sirena, J. Guimpel.
Title Synthesis of nanocrystalline delta-MoN by thermal annealing of amorphous thins films grown on (100) Si by reactive DC sputtering at room temperature Type Journal Article
Year 2018 Publication Thin Solid Films Abbreviated Journal Thin Solid Films
Volume 660 Issue Pages 242-246
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Call Number BT @ nhaberk @ Serial 797
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Author (up) Pérez, M.; Blostein, J.J.; Bessia, F.A.; Tartaglione, A.; Sidelnik, I.; Haro, M.S.; Suárez, S.; Gimenez, M.L.; Berisso, M.G.; Lipovetzky, J.
Title Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium Type Journal Article
Year 2018 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 893 Issue Pages 157-163
Keywords CMOS sensors; Position sensitive neutron detectors; Gadolinium conversion layer; Neutron detection technique
Abstract In this work we will introduce a novel low cost position sensitive thermal neutron detection technique, based on a Commercial Off The Shelf CMOS image sensor covered with a Gadolinium containing conversion layer. The feasibility of the neutron detection technique implemented in this work has been experimentally demonstrated. A thermal neutron detection efficiency of 11.3% has been experimentally obtained with a conversion layer of 11.6 μm. It was experimentally verified that the thermal neutron detection efficiency of this technique is independent on the intensity of the incident thermal neutron flux, which was confirmed for conversion layers of different thicknesses. Based on the experimental results, a spatial resolution better than 25 μm is expected. This spatial resolution makes the proposed technique specially useful for neutron beam characterization, neutron beam dosimetry, high resolution neutron imaging, and several neutron scattering techniques.
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ISSN 0168-9002 ISBN Medium
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Call Number BT @ pedrazp @ Serial 834
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Author (up) Pérez, M.; Haro, M.S.; Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Alcade Bessia, F.; Gómez Berisso, M.; Blostein, J.J.
Title Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal Rad. Phys. Chem.
Volume 177 Issue Pages 109062
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Abstract We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines.
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ISSN 0969806X ISBN Medium
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Call Number BT @ pedrazp @ Serial 868
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Author (up) Pérez, M.; Lipovetzky, J.; Sofo Haro, M.; Sidelnik, I.; Blostein, J. J.; Alcalde Bessia, F.; Gómez Berisso, M.
Title Particle detection and classification using commercial off the shelf CMOS image sensors Type Journal Article
Year 2016 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 827 Issue Pages 171
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Call Number BT @ pedrazp @ Serial 754
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