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Author  |
Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application |
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Journal Article |
| Year |
2019 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Transactions on Nuclear Science |
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1-1 |
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Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator |
| Abstract |
We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA. |
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BT @ pedrazp @ |
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841 |
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| Author |
Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
Type |
Conference Article |
| Year |
2018 |
Publication |
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
Abbreviated Journal |
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
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Pages |
1-3 |
| Keywords |
dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi |
| Abstract |
Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode. |
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2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
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BT @ pedrazp @ |
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839 |
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Alcalde Bessia, F.; Pérez, M.; Gomez Berisso, M.; Piunno, N.; Mateos, H.; Pomiro, F.J.; Sidelnik, I.; Blostein, J.J.; Sofo Haro, M.; Lipovetzky, J. |
| Title |
X-ray micrographic imaging system based on COTS CMOS sensors |
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Conference Article |
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2017 |
Publication |
2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) |
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1-4 |
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biological techniques; biology computing; CMOS image sensors; image processing equipment; X-ray imaging; X-ray image acquisition; X-ray micrographic imaging system; Commercial Off The Shelf CMOS image sensors; biology; paleontology research; scintillator conversion layers; electronic components inspection; COTS CMOS sensors; electron volt energy 8.0 keV; Photonics; X-ray imaging; Silicon; Attenuation; Detectors; Image sensors; Cmos; Vlsi; X-ray applications; Biomedical imaging; CMOS image sensors |
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This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers. |
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2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) |
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BT @ pedrazp @ |
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831 |
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Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation |
Type |
Journal Article |
| Year |
2018 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Transactions on Nuclear Science |
| Volume |
65 |
Issue |
11 |
Pages |
2793-2801 |
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alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays |
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In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture. |
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BT @ pedrazp @ |
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835 |
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Benfica, J.; Green, B.; Porcher, B.C.; Bolzani Poehls, L.; Vargas, F.; Medina, N.H.; Added, N.; de Aguiar, V.A.P.; Macchione, E.L.A.; Aguirre, F.; Silveira, M.A.G.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Lipovetzky, J.; Bezerra, E.A. |
| Title |
Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects |
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Journal Article |
| Year |
2016 |
Publication |
IEEE Transactions on Nuclear Science |
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63 |
Issue |
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Pages |
1294 |
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BT @ pedrazp @ |
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753 |
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Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Gómez Berisso, M. |
| Title |
Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor |
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Journal Article |
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2020 |
Publication |
Radiation Physics and Chemistry |
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167 |
Issue |
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Pages |
108244 |
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CMOS image detectors; Ionizing radiation; X-rays; Imaging |
| Abstract |
In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources. |
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0969-806x |
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BT @ pedrazp @ |
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838 |
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N. Haberkorn, S. Bengio, H. Troiani, S. Suárez, P. D. Pérez, M. Sirena, J. Guimpel. |
| Title |
Synthesis of nanocrystalline delta-MoN by thermal annealing of amorphous thins films grown on (100) Si by reactive DC sputtering at room temperature |
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Journal Article |
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2018 |
Publication |
Thin Solid Films |
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Thin Solid Films |
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660 |
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242-246 |
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BT @ nhaberk @ |
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797 |
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Pérez, M.; Blostein, J.J.; Bessia, F.A.; Tartaglione, A.; Sidelnik, I.; Haro, M.S.; Suárez, S.; Gimenez, M.L.; Berisso, M.G.; Lipovetzky, J. |
| Title |
Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium |
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Journal Article |
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2018 |
Publication |
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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893 |
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157-163 |
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CMOS sensors; Position sensitive neutron detectors; Gadolinium conversion layer; Neutron detection technique |
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In this work we will introduce a novel low cost position sensitive thermal neutron detection technique, based on a Commercial Off The Shelf CMOS image sensor covered with a Gadolinium containing conversion layer. The feasibility of the neutron detection technique implemented in this work has been experimentally demonstrated. A thermal neutron detection efficiency of 11.3% has been experimentally obtained with a conversion layer of 11.6 μm. It was experimentally verified that the thermal neutron detection efficiency of this technique is independent on the intensity of the incident thermal neutron flux, which was confirmed for conversion layers of different thicknesses. Based on the experimental results, a spatial resolution better than 25 μm is expected. This spatial resolution makes the proposed technique specially useful for neutron beam characterization, neutron beam dosimetry, high resolution neutron imaging, and several neutron scattering techniques. |
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0168-9002 |
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BT @ pedrazp @ |
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834 |
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Pérez, M.; Haro, M.S.; Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Alcade Bessia, F.; Gómez Berisso, M.; Blostein, J.J. |
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Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV |
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Journal Article |
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2020 |
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Radiation Physics and Chemistry |
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Rad. Phys. Chem. |
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177 |
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109062 |
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We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines. |
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0969806X |
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BT @ pedrazp @ |
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868 |
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Pérez, M.; Lipovetzky, J.; Sofo Haro, M.; Sidelnik, I.; Blostein, J. J.; Alcalde Bessia, F.; Gómez Berisso, M. |
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Particle detection and classification using commercial off the shelf CMOS image sensors |
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Journal Article |
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2016 |
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Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
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827 |
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171 |
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