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Author Sidelnik, I.; Asorey, H.; Guarin, N.; Durán, M.S.; Bessia, F.A.; Arnaldi, L.H.; Berisso, M.G.; Lipovetzky, J.; Pérez, M.; Haro, M.S.; Blostein, J.J.
Title Neutron detection capabilities of Water Cherenkov Detectors Type Journal Article
Year 2020 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 952 Issue Pages (down) 161962
Keywords Neutron detection; Water Cherenkov Detector; Cherenkov effect; Space weather; Homeland security
Abstract In this work we show the neutron detection capabilities of a water Cherenkov detector (WCD). The experiments presented here were performed using a simple WCD with a single photomultiplier tube (PMT) and a 252Cf neutron source. We compared the use of pure water and water with non contaminant additive as the detection volume. We show that fast neutrons from the 252Cf source can be detected over the flux of atmospheric particles background. Our first estimation for the neutron detection efficiency is at the level of (19)% for pure water and (44)% for the water with the additive. We also present the simulation of the response of the WCD to neutrons using a simulated 252Cf source. We implemented a detailed model of the WCD and of the neutron source spectra using Geant 4. The results of our simulations show the detailed mechanism for the detection of neutrons using WCD and support the experimental evidences presented. Since both active volumes studied, H2O pure and with additive, are cheap, non-toxic and easily accessible materials, the results obtained are of interest for the development of large neutron detectors for different applications. Of special importance are those related with space weather phenomena as well as those for the detection of special nuclear materials. We conclude that WCD used as neutron detectors can be a complementary tool for standard neutron monitors based on 3He.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 837
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Author Pérez, M.; Haro, M.S.; Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Alcade Bessia, F.; Gómez Berisso, M.; Blostein, J.J.
Title Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal Rad. Phys. Chem.
Volume 177 Issue Pages (down) 109062
Keywords
Abstract We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0969806X ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 868
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Author Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Blostein, J.J.; Balmaceda, D.F.; Gómez Berisso, M.; Lipovetzky, J.
Title Soft X-rays spectroscopy with a commercial CMOS image sensor at room temperature Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal
Volume 167 Issue Pages (down) 108354
Keywords X-rays spectroscopy; CMOS image sensors (CIS); CMOS active pixel sensor (APS); Front-side illuminated; Charge transport; Single-photon; Incomplete charge collection (ICC); Charge collection efficiency (CCE)
Abstract Besides their application in point and shoot cameras, webcams, and cell phones, it has been shown that CMOS image sensors (CIS) can be used for dosimetry, X-ray and neutron imaging applications. In this work we will discuss the application of an ON Semiconductor MT9M001 CIS, in low energy X-ray spectroscopy. The device is a monochromatic front-side illuminated sensor, very popular in consumer electronics. In this work we introduce the configuration selected for the mentioned sensor, the image processing techniques and event selection criteria, implemented in order to measure the X-ray energy in the range from 1-10 keV. Several fluorescence lines of different samples have been resolved, and for first time the line resolution have been measured and analyzed. We achieved a FWHM of 232 eV at 6.4 keV, and we concluded that incomplete charge collection (ICC) of the charge produced by the X-ray contributes to the resolution, being this effect more important at higher X-ray energies. The results analyzed in this work indicate that the mentioned CIS are specially suitable for X-ray applications in which energy and spatial resolutions are simultaneously required.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0969-806x ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 840
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Author Lipovetzky, J.; Cicuttin, A.; Crespo, M.L.; Sofo Haro, M.; Alcalde Bessia, F.; Pérez, M.; Gómez Berisso, M.
Title Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor Type Journal Article
Year 2020 Publication Radiation Physics and Chemistry Abbreviated Journal
Volume 167 Issue Pages (down) 108244
Keywords CMOS image detectors; Ionizing radiation; X-rays; Imaging
Abstract In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0969-806x ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 838
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Author Pérez, M.; Martínez, E.D.; Lipovetzky, J.; Marín, J.; Sofo Haro, M.; Alcalde Bessia, F.; Gómez Berisso, M.; Blostein, J.J.
Title High spatial resolution neutron detection technique based on Commercial Off-The-Shelf CMOS image sensors covered with NaGdF_4 nanoparticles Type Journal Article
Year 2021 Publication Journal of Instrumentation Abbreviated Journal J. Inst.
Volume 16 Issue Pages (down) P08008
Keywords
Abstract We present a position-sensitive neutron detection technique based on a Commercial Off-The-Shelf CMOS image sensor (CIS) covered with nanoparticles of sodium gadolinium fluoride (NaGdF4). The synthesis procedure and characterization of the NaGdF4 nanoparticles are detailed, as well as the deposition method of the conversion layers over the surface of the chips. We also present a manufacture method of test patterns made with neutron-absorbing materials. These patterns were designed to evaluate the performance of the proposed technique. Analyzing the obtained neutron images we conclude that the intrinsic spatial resolution of the developed method is better than (15±6) μm, this upper bound for the spatial resolution is comparable with that obtained with the best neutron position-sensitive detectors available nowadays.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 1748-0221 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 869
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Author Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages (down) 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Language Summary Language Original Title
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Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 835
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Author Benfica, J.; Green, B.; Porcher, B.C.; Bolzani Poehls, L.; Vargas, F.; Medina, N.H.; Added, N.; de Aguiar, V.A.P.; Macchione, E.L.A.; Aguirre, F.; Silveira, M.A.G.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Lipovetzky, J.; Bezerra, E.A.
Title Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects Type Journal Article
Year 2016 Publication IEEE Transactions on Nuclear Science Abbreviated Journal
Volume 63 Issue Pages (down) 1294
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Abstract
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Language Summary Language Original Title
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Notes Approved no
Call Number BT @ pedrazp @ Serial 753
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Author N. Haberkorn, S. Bengio, H. Troiani, S. Suárez, P. D. Pérez, M. Sirena, J. Guimpel.
Title Synthesis of nanocrystalline delta-MoN by thermal annealing of amorphous thins films grown on (100) Si by reactive DC sputtering at room temperature Type Journal Article
Year 2018 Publication Thin Solid Films Abbreviated Journal Thin Solid Films
Volume 660 Issue Pages (down) 242-246
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Abstract
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Notes Approved no
Call Number BT @ nhaberk @ Serial 797
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Author Pérez, M.; Lipovetzky, J.; Sofo Haro, M.; Sidelnik, I.; Blostein, J. J.; Alcalde Bessia, F.; Gómez Berisso, M.
Title Particle detection and classification using commercial off the shelf CMOS image sensors Type Journal Article
Year 2016 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 827 Issue Pages (down) 171
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Abstract
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 754
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Author Pérez, M.; Blostein, J.J.; Bessia, F.A.; Tartaglione, A.; Sidelnik, I.; Haro, M.S.; Suárez, S.; Gimenez, M.L.; Berisso, M.G.; Lipovetzky, J.
Title Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium Type Journal Article
Year 2018 Publication Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment Abbreviated Journal
Volume 893 Issue Pages (down) 157-163
Keywords CMOS sensors; Position sensitive neutron detectors; Gadolinium conversion layer; Neutron detection technique
Abstract In this work we will introduce a novel low cost position sensitive thermal neutron detection technique, based on a Commercial Off The Shelf CMOS image sensor covered with a Gadolinium containing conversion layer. The feasibility of the neutron detection technique implemented in this work has been experimentally demonstrated. A thermal neutron detection efficiency of 11.3% has been experimentally obtained with a conversion layer of 11.6 μm. It was experimentally verified that the thermal neutron detection efficiency of this technique is independent on the intensity of the incident thermal neutron flux, which was confirmed for conversion layers of different thicknesses. Based on the experimental results, a spatial resolution better than 25 μm is expected. This spatial resolution makes the proposed technique specially useful for neutron beam characterization, neutron beam dosimetry, high resolution neutron imaging, and several neutron scattering techniques.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0168-9002 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 834
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