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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. doi  openurl
  Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
  Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume 65 Issue 11 Pages 2793-2801  
  Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays  
  Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.  
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  Call Number BT @ pedrazp @ Serial 835  
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Author (up) Amigó, M.L.; Haberkorn, N.; Pérez, P.; Suárez, S.; Nieva, G. url  doi
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  Title Vortex dynamics in β -FeSe single crystals: effects of proton irradiation and small inhomogeneous stress Type Journal Article
  Year 2017 Publication Superconductor Science and Technology Abbreviated Journal Supercond. Sci. Technol.  
  Volume 30 Issue 12 Pages 125017  
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  Abstract We report on the critical current density J c and the vortex dynamics of pristine and 3 MeV proton irradiated (cumulative dose equal to ##IMG## [http://ej.iop.org/images/0953-2048/30/12/125017/sustaa9518ieqn1.gif] {$2\times {10}^{16}$} cm −2 ) β -FeSe single crystals. We also analyze a remarkable dependence of the superconducting critical temperature T c , J c and the flux creep rate S on the sample mounting method. Free-standing crystals present T c = 8.4(1) K, which increases to 10.5(1) K when they are fixed to the sample holder by embedding them with GE-7031 varnish. On the other hand, the irradiation has a marginal effect on T c . The pinning scenario can be ascribed to twin boundaries and random point defects. We find that the main effect of irradiation is to increase the density of random point defects, while the embedding mainly reduces the density of twin boundaries. Pristine and irradiated crystals present two outstanding features in the temperature dependence of the flux creep rate: ##IMG## [http://ej.iop.org/images/0953-2048/30/12/125017/sustaa9518ieqn2.gif] {$S(T)$} presents large values at low temperatures, which can be attributed to small pinning energies, and a plateau at intermediate temperatures, which can be associated with glassy relaxation. From Maley analysis, we observe that the characteristic glassy exponent μ changes from ∼1.7 to 1.35–1.4 after proton irradiation.  
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  ISSN 0953-2048 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 770  
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Author (up) Haberkorn, N.; Bengio, S.; Suárez, S.; Pérez, P.D.; Hofer, J.A.; Sirena, M. url  openurl
  Title Effect of thermal annealing and irradiation damage on the superconducting critical temperature of nanocrystalline γ-Mo2N thin films Type Journal Article
  Year 2019 Publication Materials Letters Abbreviated Journal  
  Volume 236 Issue Pages 252-255  
  Keywords Nitrides; Sputtering; Superconductivity; Irradiation  
  Abstract We report on the influence of the disorder and stoichiometry in the resulting superconducting critical temperature of γ-Mo2N thin films. Initially, three films (with Tc values of 7.6 K, 6.8 K and 6 K) were grown at room temperature by reactive sputtering, on Si (1 0 0) using different N2/(Ar+N2) mixtures. The influence of the thermal annealing up to 973 K and irradiation damage produced by 1 MeV Zr+(fluence up 2 × 1014 cm−2) is analyzed. The Tc of pristine films remains unchanged for increasing irradiation doses up 2 × 1014 cm−2. The Tc for annealed films decreases close to the value expected for bulk samples (≈5 K) for increasing the annealing temperature. Successive irradiations of the annealed films tend to increase their Tc up to its initial values (before annealing). The results indicate that the Tc in nanometric grain size γ-Mo2N thin films is affected by both nitrogen stoichiometry and disorder at the atomic scale.  
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  ISSN 0167-577x ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 850  
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Author (up) Haberkorn, N.; Bengio, S.; Suárez, S.; Pérez, P.D.; Sirena, M.; Guimpel, J. url  openurl
  Title Effect of the nitrogen-argon gas mixtures on the superconductivity properties of reactively sputtered molybdenum nitride thin films Type Journal Article
  Year 2018 Publication Materials Letters Abbreviated Journal Materials Letters  
  Volume 215 Issue Pages 15-18  
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  Notes Cited By :1; Export Date: 14 March 2018 Approved no  
  Call Number BT @ jguimpel @ Serial 783  
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Author (up) Haberkorn, N.; Bengio, S.; Troiani, H.; Suárez, S.; Pérez, P.D.; Granell, P.; Golmar, F.; Sirena, M.; Guimpel, J. url  openurl
  Title Thickness dependence of the superconducting properties of γ- Mo<inf>2</inf>N thin films on Si (001) grown by DC sputtering at room temperature Type Journal Article
  Year 2018 Publication Materials Chemistry and Physics Abbreviated Journal Mater. Chem. Phys  
  Volume 204 Issue Pages 48-57  
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  Notes Cited By :1; Export Date: 14 March 2018 Approved no  
  Call Number BT @ jguimpel @ Serial 785  
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Author (up) Haberkorn, N.; Suárez, S.; Pérez, P.D.; Troiani, H.; Granell, P.; Golmar, F.; Lee, J.-H.; Moon, S.H. url  doi
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  Title Effect of mixed pinning landscapes produced by 6 MeV oxygen irradiation on the resulting critical current densities Jc in 1.3 µm thick GdBa2Cu3O7-d coated conductors grown by co-evaporation Type Journal Article
  Year 2017 Publication Physica C: Superconductivity and its Applications Abbreviated Journal Physica C  
  Volume 542 Issue Pages 6-11  
  Keywords Coated conductors; Vortex dynamics; Glassy exponents; Irradiation  
  Abstract We report the influence of crystalline defects introduced by 6 MeV 16O3+ irradiation on the critical current densities Jc and flux creep rates in 1.3 µm thick GdBa2Cu3O7-δ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2 × 1013 cm−2 and 4 × 1014 cm−2. The irradiations were performed with the ion beam perpendicular to the surface of the samples. The Jc and the flux creep rates were analyzed for two magnetic field configurations: magnetic field applied parallel (Hâ•‘c) and at 45° (Hâ•‘45°) to the c-axis. The results show that at temperatures below 40 K the in-field Jc dependences can be significantly improved by irradiation. For doses of 1 × 1014 cm−2 the Jc values at μ0H = 5 T are doubled without affecting significantly the Jc at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H‖c and H||45° in pristine films presents characteristic glassy exponents μ = 1.63 and μ = 1.45, respectively. For samples irradiated with 1 × 1014 cm−2, these values drop to μ = 1.45 and μ = 1.24, respectively  
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  ISSN 0921-4534 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 771  
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Author (up) Hofer, J.A.; Bengio, S.; Rozas, G.; Pérez, P.D.; Sirena, M.; Suárez, S.; Haberkorn, N. url  doi
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  Title Compositional effects on the electrical properties of extremely disordered molybdenum oxynitrides thin films Type Journal Article
  Year 2020 Publication Materials Chemistry and Physics Abbreviated Journal Mater. Chem. Phys.  
  Volume 242 Issue Pages 122075  
  Keywords Molybdenum; Oxynitrides; Thin films; Sputtering; Electrical transport  
  Abstract Molybdenum oxynitride (MoNxOy) thin films were grown by reactive sputtering on Si (100) substrates at room temperature. The partial pressure of Ar was fixed at 90%, and the remaining 10% was adjusted with mixtures N2:O2 (varying from pure N2 to pure O2). The electrical properties of the films depend on the chemical composition. Thin films grown using mixtures up to 2% O2 have γ-Mo2N phase and display superconductivity. The superconducting critical temperature Tc reduces from ∼6.8 K to below 3.0 K as the oxygen increases. On the other hand, the films are mostly amorphous for gas mixtures above 2% O2. The electrical conductivity shows a semiconductor-like behavior well described by variable-range hopping conduction. The analysis of the optical properties reveals that the samples do not have a defined semiconductor bandgap, indicating that the high structural disorder produces electron excitation for a wide range of energies.  
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  ISSN 0254-0584 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 860  
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