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Author Navarro, H.; Yang, I.; Sirena, M.; Kim, J.; Haberkorn, N. url  doi
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  Title Characterization of the insulator barrier and the superconducting transition temperature in GdBa2Cu3O7−δ/BaTiO3 bilayers for application in tunnel junctions Type Journal Article Article
  Year 2015 Publication Journal of Applied Physics Abbreviated Journal J. Appl. Phys.  
  Volume 118 Issue 4 Pages (down) 045308  
  Keywords  
  Abstract The optimization of the superconducting properties in a bottom electrode and the quality of an insulator barrier are the first steps in the development of superconductor/insulator/superconductor tunnel junctions. Here, we study the quality of a BaTiO3 tunnel barrier deposited on a 16 nm thick GdBa2Cu3O7−δ thin film by using conductive atomic force microscopy. We find that the tunnel current is systematically reduced (for equal applied voltage) by increasing the BaTiO3 barrier thickness between 1.6 and 4 nm. The BaTiO3 layers present an energy barrier of ≈1.2 eV and an attenuation length of 0.35–0.5 nm (depending on the applied voltage). The GdBa2Cu3O7−δ electrode is totally covered by a BaTiO3 thickness above 3 nm. The presence of ferroelectricity was verified by piezoresponse force microscopy for a 4 nm thick BaTiO3 top layer. The superconducting transition temperature of the bilayers is systematically suppressed by increasing the BaTiO3 thickness. This fact can be associated with stress at the interface and a reduction of the orthorhombicity of the GdBa2Cu3O7−δ. The reduction in the orthorhombicity is expected by considering the interface mismatch and it can also be affected by reduced oxygen stoichiometry (poor oxygen diffusion across the BaTiO3 barrier).  
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  Call Number BT @ pedrazp @ Serial 727  
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