| |
Records |
Links |
|
Author  |
Conte, V.; Giordano, J.L.; Zarate, J.J.; Luzuriaga, J. |
|
| |
Title |
Superconducting Devices for Radioastronomy; First Steps in Chile: SNS-junction Fabrication |
Type |
Conference Article |
| |
Year |
2010 |
Publication |
|
Abbreviated Journal |
|
|
| |
Volume |
1 |
Issue |
|
Pages |
424-427 |
|
| |
Keywords |
|
|
| |
Abstract |
We present results of the microfabrication of Josephson Junctions (JJs) of Superconductor-Normal-superconductor (SNS) type, as a first step in the acquisition of the know-how of superconducting devices applied to radioastronomy. A twojunction SQUID was built using a Nb/Al bilayer deposited on a Si wafer. The procedure needs only one mask and a single UV exposure (i.e., one photolithography step). We show the micrograph and the observed non linear characteristic I-V curve at 4K of the first device fabricated in the framework of ALMA Grant 31090010. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
Twenty-First International Symposium on Space Terahertz Technology |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
BT @ pedrazp @ |
Serial |
736 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Zarate, J.J.; Pastoriza, H. |
|
| |
Title |
Thermal response of Josephson junction arrays on silicon nitride membranes |
Type |
Journal Article |
| |
Year |
2009 |
Publication |
Journal of Physics: Conference Series |
Abbreviated Journal |
|
|
| |
Volume |
150 |
Issue |
1 |
Pages |
012057-4 |
|
| |
Keywords |
|
|
| |
Abstract |
In order to study the vortex dynamics in Josephson junction arrays under temperature perturbations we have build Pb/Cu structures on top of Si3N4 membranes. Membranes with an area of 1 mm2 and with a thickness of 650 nm were fabricated by anisotropic etching of a silicon substrate previously covered with a low stress nitride film. By e-beam lithography and thermal evaporation we defined two similar SNS Josephson arrays one on top of the membrane and another on the bulk substrate. The heat source was provided illuminating the sample space with a conventional LED placed a few millimeters away from the substrate. Using the superconducting transition of both arrays the thermal response of the system has been characterized obtaining a cut-off frequency of 150 Hz and the power efficiency of our setup. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
|
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
BT @ hernan @ zarate09 |
Serial |
310 |
|
| Permanent link to this record |
| |
|
| |
|
Author |
Zarate, J.J.; Pastoriza, H. |
|
| |
Title |
Correction algorithm for the proximity effect in e-beam lithography |
Type |
Conference Article |
| |
Year |
2008 |
Publication |
Micro-Nanoelectronics, Technology and Applications, 2008. EAMTA 2008. Argentine School of |
Abbreviated Journal |
|
|
| |
Volume |
|
Issue |
|
Pages |
38-42 |
|
| |
Keywords |
electron beam lithography, proximity effect (lithography)correction algorithm, e-beam lithography, irradiated dose, numerical algorithm, pattern transfer, proximity effect, resist sensitivity |
|
| |
Abstract |
e-beam lithography is a technique capable of fabricate sub-micrometer planar structures. The ultimate resolution in this technique is limited mainly by the proximity effect where the dose accumulated in one spacial point is affected by the irradiated dose in its neighborhood. The relevance of this effect in one particular pattern strongly depends on its geometry, the sensitivity of the resist and the physical characteristics of the substrate. In this work we present a numerical algorithm to calculate the nominal dose needed to be applied in each point of the geometry that results in an optimal net dose for an efficient pattern transfer. |
|
| |
Address |
|
|
| |
Corporate Author |
|
Thesis |
|
|
| |
Publisher |
|
Place of Publication |
|
Editor |
|
|
| |
Language |
|
Summary Language |
|
Original Title |
|
|
| |
Series Editor |
|
Series Title |
|
Abbreviated Series Title |
|
|
| |
Series Volume |
|
Series Issue |
|
Edition |
|
|
| |
ISSN |
|
ISBN |
|
Medium |
|
|
| |
Area |
|
Expedition |
|
Conference |
EAMTA 2008 |
|
| |
Notes |
|
Approved |
no |
|
| |
Call Number |
BT @ hernan @ zarate08 |
Serial |
46 |
|
| Permanent link to this record |
