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Author (up) del Corro, P.G.; Imboden, M.; Pérez, D.J.; Bishop, D.J.; Pastoriza, H.
Title Single ended capacitive self-sensing system for comb drives driven XY nanopositioners Type Journal Article
Year 2018 Publication Sensors and Actuators A: Physical Abbreviated Journal
Volume 271 Issue Pages 409-417
Keywords Comb drives; Nanopositioners; Capacitive detection
Abstract This paper presents the implementation of a system to capacitively self-sense the position of a comb drive based MEMS XY nanopositioner from a single common node. The nanopositioner was fabricated using the multi-users PolyMUMPs process, on which comb capacitors fringe fields are large and out of plane forces cause considerable deflection. An extensive analysis of the comb-drive capacitance including the levitation effects and its correlation to the measurements is presented. Each axis is independently measured using frequency division multiplexing (FDM) techniques. Taking advantage of the symmetry of the nanopositioner itself, the sensitivity is doubled while eliminating the intrinsic capacitance of the device. The electrical measured noise is 2.5aF/Hz, for a sensing voltage Vsen=3Vrms and fsen=150kHz, which is equivalent to 1.1nm/Hz lateral displacement noise. This scheme can also be extended to N-degree of freedom nanopositioners.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 0924-4247 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ hernan @ Serial 763
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Author (up) Imboden, M.; Han, H.; Stark, T.; Lowell, E.; Chang, J.; Pardo, F.; Bolle, C.; del Corro, P.G.; Bishop, D.J.
Title Building a Fab on a Chip Type Journal Article
Year 2014 Publication Nanoscale Abbreviated Journal
Volume 6 Issue Pages 5049-5062
Keywords
Abstract Semiconductor fabs are large, complex industrial sites with costs for a single facility approaching $10B. In this paper we discuss the possibility of putting the entire functionality of such a fab onto a single silicon chip. We demonstrate a path forward where, for certain applications, especially at the nanometer scale, one can consider using a single chip approach for building devices with significant potential cost savings. In our approach, we build micro versions of the macro machines one typically finds in a fab, and integrating all the components together. We argue that the technology now exists to allow one to build a Fab on a Chip.
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Corporate Author Thesis
Publisher The Royal Society of Chemistry Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2040-3364 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ hernan @ Serial 679
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Author (up) Navarro, H.; Sirena, M.; González Sutter, J.; Troiani, H.E.; del Corro, P.G.; Granell, P.; Golmar, F.; Haberkorn, N.
Title Electrical transport across nanometric SrTiO3 and BaTiO3 barriers in conducting/insulator/conducting junctions Type Journal Article
Year 2018 Publication Materials Research Express Abbreviated Journal
Volume 5 Issue 1 Pages 016408
Keywords
Abstract We report the electrical transport properties of conducting/insulator/conducting heterostructures by studying current–voltage IV curves at room temperature. The measurements were obtained on tunnel junctions with different areas (900, 400 and 100 μ m 2 ) using a conducting atomic force microscope. Trilayers with GdBa 2 Cu 3 O 7 (GBCO) as the bottom electrode, SrTiO 3 or BaTiO 3 (thicknesses between 1.6 and 4 nm) as the insulator barrier, and GBCO or Nb as the top electrode were grown by DC sputtering on (100) SrTiO 3 substrates For SrTiO 3 and BaTiO 3 barriers, asymmetric IV curves at positive and negative polarization can be obtained using electrodes with different work function. In addition, hysteretic IV curves are obtained for BaTiO 3 barriers, which can be ascribed to a combined effect of the FE reversal switching polarization and an oxygen vacancy migration. For GBCO/BaTiO 3 /GBCO heterostructures, the IV curves correspond to that expected for asymmetric interfaces, which indicates that the disorder affects differently the properties at the bottom and top interfaces. Our results show the role of the interface disorder on the electrical transport of conducting/insulator/conduction heterostructures, which is relevant for different applications, going from resistive switching memories (at room temperature) to Josephson junctions (at low temperatures).
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
ISSN 2053-1591 ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 772
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