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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. url  doi
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  Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
  Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume Issue Pages 1-1  
  Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator  
  Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.  
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  Call Number BT @ pedrazp @ Serial 841  
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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. url  doi
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  Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
  Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)  
  Volume Issue Pages 1-3  
  Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi  
  Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.  
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  Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 839  
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Author Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. doi  openurl
  Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
  Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume 65 Issue 11 Pages 2793-2801  
  Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays  
  Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.  
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  Call Number BT @ pedrazp @ Serial 835  
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Author Ale Crivillero, M.V.; Haberkorn, N.; Nieva, G.; Guimpel, J. url  openurl
  Title Electrical transport properties of FeSe/Fe3O4 bilayers Type Journal Article
  Year 2019 Publication Materials Today: Proceedings Abbreviated Journal XXIII Latin American Symposium on Solid State Physics (SLAFES XXIII), San Carlos de Bariloche, Argen  
  Volume 14 Issue Pages 18-21  
  Keywords FeSe thin films; Magnetite thin films; Superconductivity  
  Abstract In this work, we study the electronic properties of FeSe/Fe3O4 bilayers deposited onto SrTiO3 (100) and MgO (100) substrates by DC magnetron sputtering. The comparative study of Fe3O4 films grown on SrTiO3 and MgO reveals significant differences in the intensity of the Verwey transition (Tv∼130K). This allows us to probe the impact of the distortions associated to the Verwey transition on the transport properties of the FeSe over-layer in the FeSe/Fe3O4 bilayers. A correlated increase in the resistance and weakened superconducting properties are observed..  
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  ISSN 2214-7853 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ gnieva @ Serial 846  
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Author Amigó, M.L.; Ale Crivillero, M.V.; Franco, D.G.; Guimpel, J.; Nieva, G. doi  openurl
  Title Influence of the Fe Concentration on the Superconducting Properties of Fe_{1-y}Se Type Journal Article
  Year 2015 Publication Journal of Low Temperature Physics Abbreviated Journal  
  Volume 179 Issue 1-2 Pages 15-20  
  Keywords Chalcogenide; Vortex pinning; Correlated defects; Electrical transport; Fe deficiency  
  Abstract We present a comparative study of electrical transport properties in the normal state and in the dissipative superconducting state between pure TeX -FeSe phase and Fe deficient Fe TeX Se crystals. We discuss the influence of the intergrowth of the magnetic hexagonal phase (Fe TeX Se TeX ) in Fe deficient samples when compared to pure TeX -FeSe samples. In the superconducting state, we measured the TeX -plane electrical resistivity with magnetic field up to 16 T and the electrical resistivity as a function of the angle between the TeX axis and the applied field. The angular dependence at fixed temperature below the superconducting critical temperature, TeX , is very different for both sets of crystals. The Fe deficient samples display a vortex pinning-related feature at TeX 57 TeX off the plane while the pure TeX -FeSe phase samples show the persistence of a strong angular-dependent magnetoresistance characteristic of the normal state electronic structure.  
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  Publisher Springer US Place of Publication Editor  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0022-2291 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 712  
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Author Belussi, C.H.; Berisso, M.G.; Fasano, Y. doi  openurl
  Title Note: Single-polarity high-voltage amplifier to drive coarse-approach slip-stick piezoelectric motors Type Journal Article
  Year 2013 Publication Review of Scientific Instruments Abbreviated Journal Rev. Sci. Instrum.  
  Volume 84 Issue 5 Pages 056104-3  
  Keywords amplifiers; Mosfet; piezoelectric motors; scanning probe microscopy  
  Abstract Scanning probe microscopies typically rely on coarse-approach slip-stick piezoelectric motors that work by exciting piezoelectric stacks with sawtooth signals of hundreds of V and some kHz. For this application, we introduce a single-polarity high-voltage amplifier based on discrete MOSFET-technology components with improved output current desirable for low-temperature actuation. The amplifier has an output signal of 600 V, 100 mA output current, noise level below 2 μV/math, 4 kHz high-voltage bandwidth, 2 V/μs slew-rate, and rise and fall times of 80 μs (when loaded with 30 nF). The circuit was successfully applied to drive a home-made scanning tunnelling microscope.  
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  Notes Approved no  
  Call Number BT @ berisso @ Serial 656  
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Author Berger, S.; Hauser, R.; Michor, H.; Hilscher, G.; Bauer, E.; Sereni, J.G.; Rogl, P. doi  openurl
  Title Thermodynamic properties of Ce(RuxRh1-x)3B2 Type Journal Article
  Year 1999 Publication Physica B Abbreviated Journal Physica B  
  Volume 259-261 Issue Pages 116-117  
  Keywords CeRh3B2; Ce(RuxRh1-x)3B2; Phase diagram; Ferromagnetism  
  Abstract Investigations of the magnetic phase diagram of Ce(RuxRh1-x)(3)B-2 were complemented by detailed specific heat and susceptibility measurements revealing complex magnetic order without spontaneous magnetisation. This regime follows the ferromagnetic phase on Rh/Ru substitution for x greater than or similar to 0.06. (C) 1999 Elsevier Science B.V. All rights reserved.  
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  ISSN 0921-4526 ISBN Medium  
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  Notes ISI:000079315700052 Approved no  
  Call Number BT @ hernan @ Serial 81  
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Author Betancourth, D.; Correa, V.F.; García, D.J. doi  openurl
  Title Evidence of a Low Energy Anisotropy in GdCoIn_5 Type Journal Article
  Year 2015 Publication Journal of Low Temperature Physics Abbreviated Journal J. Low Temp. Phys.  
  Volume 179 Issue 1-2 Pages 90-93  
  Keywords Rare earth magnetism; Antiferromagnetic transition; Anisotropy  
  Abstract We investigate the effects of an applied magnetic field on the magnetic properties of the antiferromagnet GdCoIn 5 . The prominent anisotropy observed in the susceptibility below TN is rapidly suppressed by a field of just a few Tesla. Further evidence of this low energy-scale is obtained from magnetoresistance and magnetostriction experiments. The lattice length, particularly, shows a sudden change below 2 T when the magnetic field is applied perpendicular to the crystallographic c^ -axis.  
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  Publisher Springer US Place of Publication Editor  
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  ISSN 0022-2291 ISBN Medium  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 710  
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Author D'Anna, G.; Andr url  openurl
  Title Flux-line response in 2H-NbSe2 investigated by means of the vibrating superconductor method Type Journal Article
  Year 1993 Publication Physica C: Superconductivity and its applications Abbreviated Journal Phys C Supercond Appl  
  Volume 218 Issue 1-2 Pages 238-244  
  Keywords Crystals; Defects; Electric currents; Electric losses; Hydrogenation; Niobium compounds; Phase diagrams; Thermal effects; Critical currents; Flux line response; Hydrogenated niobium selenide single crystals; Peak effect; Transverse AC losses; Vibrating superconductor method; Vortex pinning regime; Superconducting materials  
  Abstract We measure transverse AC losses in the low- and high-amplitude regime of 2H-NbSe2 single crystals using vibrating superconductor methods. The measurements are sensitive to small deviations of the critical state. The data constitute evidence for a peak effect of the critical current as a function of the temperature in this compound. We construct in the H-T phase diagram the “peak-effect” line which is supposed to mark an abrupt cross-over in the vortex-pinning regime.  
  Address AT and T Bell Laboratories, Murray Hill, NJ 07974, United States  
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  ISSN 09214534 (ISSN) ISBN Medium  
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  Notes Cited By (since 1996): 13; Export Date: 28 April 2009; Source: Scopus; CODEN: PHYCE; Language of Original Document: English; Correspondence Address: D'Anna, G.; D Approved no  
  Call Number BT @ luzuriag @ Serial 521  
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Author Decca, R.S.; Drew, H.D.; Maiorov, B.; Guimpel, J.; Osquiguil, E.J. url  openurl
  Title Inducing superconductivity at a nanoscale: Photodoping with a near- field scanning optical microscope Type Journal Article
  Year 1999 Publication Journal of Microscopy Abbreviated Journal J. Microsc.  
  Volume 194 Issue 2-3 Pages 407-411  
  Keywords High critical temperature superconductors; Near-field microscopy; Photoconductivity; Photoinduced superconductivity; barium; copper derivative; gadolinium; nanoparticle; conductance; conference paper; crystal structure; crystallography; density; fiber optics; film; illumination; magnetic field; photoactivation; priority journal; reflectometry; scanning near field optical microscopy; temperature  
  Abstract The local modification of an insulating GdBa2Cu3O6.5 thin film, made superconducting by illumination with a near-field scanning optical microscope (NSOM), is reported. A 100-nm aperture NSOM probe acts as a sub- wavelength light source of wavelength ?(exc)=480-650 nm, locally generating photocarriers in an otherwise insulating GdBa2-Cu3O6.5 thin film. Of the photogenerated electron-hole pairs, electrons are trapped in the crystallographic lattice, defining an electrostatic confining potential to enable the holes to move. Reflectance measurements at ? = 1.55 ?m at room temperature show that photocarriers can be induced and constrained to move on a ?? 200 nm scale for all investigated ?(exc). Photogenerated wires present a superconducting critical temperature T(c) = 12 K with a critical current density J(c) = 104 A cm-2. Exploiting the flexibility provided by photodoping through a NSOM probe, a junction was written by photodoping a wire with a narrow (? 50 nm) under-illuminated gap. The strong magnetic field modulation of the critical current provides a clear signature of the existence of a Josephson effect in the junction.  
  Address Ctro. Atomico Bariloche and Inst. B., Comision Nac. de Energia Atomica, 8400 S. C. de Bariloche, RN, Argentina  
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  ISSN 00222720 (ISSN) ISBN Medium  
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  Notes Cited By (since 1996): 1; Export Date: 17 April 2009; Source: Scopus; CODEN: JMICA; doi: 10.1046/j.1365-2818.1999.00540.x; Language of Original Document: English; Correspondence Address: Decca, R.S.; Laboratory for Physical Sciences; Department of Physics; University of Maryland College Park, MD 20742, United States; email: rdecca@physics.umd.edu; References: Decca, R.S., Drew, H.D., Empson, K.L., Investigation of the electric-field distribution at the subwavelength aperture of a near-field scanning optical microscope (1997) Appl. Phys. Lett., 70, pp. 1932-1934; Decca, R.S., Drew, H.D., Maiorov, B., Osquiguil, E., Guimpel, J., Photoinduced superconducting nanowires in GdBa2-Cu3O6.5 films (1998) Appl. Phys. Lett., 72, pp. 120-122; Endo, T., Hoffmann, A., Santamaria, J., Schuller, I.K., Enhancement of persistent photoconductivity by uv excitation in GdBa2Cu3O6.3 (1996) Phys. Rev. B., 54, pp. 3750-3752; Federici, J.F., Chew, D., Welker, B., Savin, W., Gutierrez-Solana, J., Fink, T., Wilber, W., Defect mechanism of photoinduced superconductivity in YBa2Cu3O6+x (1995) Phys. Rev. B, 52, pp. 15592-15597; Ginsberg, D.M., (1996) Physical Properties of High Temperature Superconductors V, , World Scientific, Singapore; Guimpel, J., Maiorov, B., Osquiguil, E., Nieva, G., Pardo, F., Interrelation between persistent photoconductivity and oxygen order in GdBa2Cu3Ox thin films (1997) Phys. Rev. B, 56, pp. 3552-3555; Kirilyuk, A.I., Kreines, N.M., Kudinov, V.I., (1990) Pis'ma Zh. Eksp. Teor. Fiz., 52, p. 696. , Frozen photoconductivity in YBaCuO films; JETP Lett., 52, pp. 49-54; Krylov, I.P., (1990) Pis'ma Zh. Eklsp. Teor. Fiz., 52, p. 1049; Mechanism for the frozen photoconductivity of YBa2Cu3O7-? JETP Lett., 52, pp. 442-446; Kudinov, V.I., Chaplygin, I.L., Kirilyuk, A.I., Keines, N.M., Laiho, R.L.E., Ayache, C., Persistent photoconductivity in YBa2Cu3O6+x films as a method of photodoping toward metallic and superconducting phases (1993) Phys. Rev. B, 47, pp. 9017-9028; Lederman, D., Hasen, J., Schuller, I.K., Photoinduced superconductivity and structural changes in high temperature superconducting films (1994) Appl. Phys. Lett., 64, pp. 652-654; Nakamura, O., Fullerton, E.E., Guimpel, J., Schuller, I.K., High Tc thin films with roughness smaller than one unit cell (1992) Appl. Phys. Lett., 60, pp. 120-122; Nieva, G., Osquiguil, E., Guimpel, J., Maenhoudt, M., Wuyts, B., Bruynseraede, Y., Maple, M.P., Schuller, I.K., Photo-induced changes in the transport properties of oxygen-deficient YBa2Cu3Ox (1992) Phys. Rev. B, 46, pp. 14249-14252; Orenstein, J., Thomas, G.A., Millis, A.J., Cooper, S.L., Rapkine, D.H., Timusk, T., Schneemeyer, L.F., Waszczak, J.V., Frequency-and temperature-dependent conductivity in YBa2Cu3O6+x crystals (1990) Phys. Rev. B, 42, pp. 6342-6362; Osquiguil, E., Maenhoudt, M., Wuyts, B., Bruynseraede, Y., Photoexcitation and oxygen ordering in YBa2Cu3Ox films (1994) Phys. Rev. B, 49, pp. 3675-3678; Tinkham, M., (1996) Introduction to Superconductivity, 2nd Edn., , McGraw-Hill, New York Approved no  
  Call Number BT @ osquigui @ Serial 376  
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