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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. doi  openurl
  Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
  Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume 65 Issue 11 Pages 2793-2801  
  Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays  
  Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 835  
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Author (up) Haberkorn, N.; Bengio, S.; Suárez, S.; Pérez, P.D.; Hofer, J.A.; Sirena, M. url  openurl
  Title Effect of thermal annealing and irradiation damage on the superconducting critical temperature of nanocrystalline γ-Mo2N thin films Type Journal Article
  Year 2019 Publication Materials Letters Abbreviated Journal  
  Volume 236 Issue Pages 252-255  
  Keywords Nitrides; Sputtering; Superconductivity; Irradiation  
  Abstract We report on the influence of the disorder and stoichiometry in the resulting superconducting critical temperature of γ-Mo2N thin films. Initially, three films (with Tc values of 7.6 K, 6.8 K and 6 K) were grown at room temperature by reactive sputtering, on Si (1 0 0) using different N2/(Ar+N2) mixtures. The influence of the thermal annealing up to 973 K and irradiation damage produced by 1 MeV Zr+(fluence up 2 × 1014 cm−2) is analyzed. The Tc of pristine films remains unchanged for increasing irradiation doses up 2 × 1014 cm−2. The Tc for annealed films decreases close to the value expected for bulk samples (≈5 K) for increasing the annealing temperature. Successive irradiations of the annealed films tend to increase their Tc up to its initial values (before annealing). The results indicate that the Tc in nanometric grain size γ-Mo2N thin films is affected by both nitrogen stoichiometry and disorder at the atomic scale.  
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  ISSN 0167-577x ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 850  
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Author (up) Haberkorn, N.; Suárez, S.; Pérez, P.D.; Troiani, H.; Granell, P.; Golmar, F.; Lee, J.-H.; Moon, S.H. url  doi
openurl 
  Title Effect of mixed pinning landscapes produced by 6 MeV oxygen irradiation on the resulting critical current densities Jc in 1.3 µm thick GdBa2Cu3O7-d coated conductors grown by co-evaporation Type Journal Article
  Year 2017 Publication Physica C: Superconductivity and its Applications Abbreviated Journal Physica C  
  Volume 542 Issue Pages 6-11  
  Keywords Coated conductors; Vortex dynamics; Glassy exponents; Irradiation  
  Abstract We report the influence of crystalline defects introduced by 6 MeV 16O3+ irradiation on the critical current densities Jc and flux creep rates in 1.3 µm thick GdBa2Cu3O7-δ coated conductor produced by co-evaporation. Pristine films with pinning produced mainly by random nanoparticles with diameter close to 50 nm were irradiated with doses between 2 × 1013 cm−2 and 4 × 1014 cm−2. The irradiations were performed with the ion beam perpendicular to the surface of the samples. The Jc and the flux creep rates were analyzed for two magnetic field configurations: magnetic field applied parallel (Hâ•‘c) and at 45° (Hâ•‘45°) to the c-axis. The results show that at temperatures below 40 K the in-field Jc dependences can be significantly improved by irradiation. For doses of 1 × 1014 cm−2 the Jc values at μ0H = 5 T are doubled without affecting significantly the Jc at small fields. Analyzing the flux creep rates as function of the temperature in both magnetic field configurations, it can be observed that the irradiation suppresses the peak associated with double-kink relaxation and increases the flux creep rates at intermediate and high temperatures. Under 0.5 T, the flux relaxation for H‖c and H||45° in pristine films presents characteristic glassy exponents μ = 1.63 and μ = 1.45, respectively. For samples irradiated with 1 × 1014 cm−2, these values drop to μ = 1.45 and μ = 1.24, respectively  
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  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0921-4534 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 771  
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Author (up) Mateos, H.; Lipovetzky, J.; Alcalde Bessia, F.; Perez, M.; Cappagli, P.; Gomez Berisso, M. url  openurl
  Title Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy Type Conference Article
  Year 2017 Publication 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE) Abbreviated Journal  
  Volume Issue Pages 1-6  
  Keywords biomedical measurement; dosimeters; dosimetry; photodetectors; photodiodes; radiation therapy; photodetectors array; sensor characterization; Commercial Of The Shelf photodiodes; 1D dosimeter array; dose spatial distribution; radiotherapy irradiation field; teletherapy source; gamma rays; beam profile measurements; dose resolution; acquisition electronics; radiation absorbed dose 0.06 cGy; Photodiodes; Sensitivity; Current measurement; Detectors; Radiation effects; Voltage measurement; Multiplexing; Radiotherapy; Ionizing Radiation; Photodiodes; Quality Assurance.  
  Abstract In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.  
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  Corporate Author Thesis  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 832  
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Author (up) Perez, M.; F. Alcalde; M. S. Haro; Sidelnik, I.; Blostein, J.J.; Gomez Berisso, M.; Lipovetzky, J. url  doi
openurl 
  Title Implementation of an ionizing radiation detector based on a FPGA-controlled COTS CMOS image sensor Type Conference Article
  Year 2017 Publication 2017 XVII Workshop on Information Processing and Control (RPIC) Abbreviated Journal  
  Volume Issue Pages 1-6  
  Keywords alpha-particle detection; beta-ray detection; CMOS image sensors; field programmable gate arrays; gamma-ray detection; ionisation chambers; gamma photon irradiation; FPGA-controlled COTS CMOS image sensor; mixed radiation field; alpha particle irradiation; shelf CMOS image sensor; ionizing radiation detector; Detectors; Field programmable gate arrays; Active pixel sensors; Biomedical imaging; Semiconductor device modeling; Random access memory; Ionizing radiation; Radiation detectors; Fpga; COTS CMOS sensors  
  Abstract This work presents the development and implementation of an ionizing radiation detector based on a commercial off the shelf CMOS image sensor and a FPGA. The response of the system was tested in irradiations with gamma photons, beta and alpha particles using different configurations of the image sensor. Finally, we analyze the possible uses of such configurations in the discrimination of events produced by alpha particles in mixed radiation fields.  
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  Language Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title 2017 XVII Workshop on Information Processing and Control (RPIC)  
  Series Volume Series Issue Edition  
  ISSN ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 833  
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