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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume Issue Pages 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Call Number BT @ pedrazp @ Serial 841
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Author (up) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Call Number BT @ pedrazp @ Serial 839
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Author (up) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Call Number BT @ pedrazp @ Serial 835
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Author (up) Lederman, D.; Osquiguil, E.; Nieva, G.; Guimpel, J.; Hasen, J.; Bruynseraede, Y.; Schuller, I.K.
Title Photoinduced enhancement of superconductivity Type Journal Article
Year 1994 Publication Journal of Superconductivity Abbreviated Journal J Supercond
Volume 7 Issue 1 Pages 127-130
Keywords photoconduction; Superconductivity; thin films; Copper oxides; Hall effect; Order disorder transitions; Radiation effects; Superconductivity; X ray analysis; Josephson coupling; Oxide superconductors; Yttrium barium cuprates; High temperature superconductors
Abstract The photoinduced enhancement of superconductivity in RBa2Cu3Ox (R=rare earth or yttrium) and PryR1-yBa2Cu3Ox was explored through temperature-dependent resistivity, Hall coefficient and mobility, and x-ray diffraction measurements. The increases in Tc are enhanced near the metal-insulator transition, although photoinduced changes always exist in oxygendeficient samples. Several explanations, including intergrain Josephson coupling, photoassisted oxygen ordering, and the trapping of photogenerated electrons in oxygen vacancies, are discussed.
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Publisher Kluwer Academic Publishers-Plenum Publishers Place of Publication Editor
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ISSN 08961107 (ISSN) ISBN Medium
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Notes Cited By (since 1996): 2; Export Date: 17 April 2009; Source: Scopus; CODEN: JOUSE; doi: 10.1007/BF00730382; Language of Original Document: English; Correspondence Address: Lederman, D.; Physics Department; University of California; San Diego La Jolla, 92093-0319, California, United States Approved no
Call Number BT @ osquigui @ Serial 397
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Author (up) Mateos, H.; Lipovetzky, J.; Alcalde Bessia, F.; Perez, M.; Cappagli, P.; Gomez Berisso, M.
Title Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy Type Conference Article
Year 2017 Publication 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE) Abbreviated Journal
Volume Issue Pages 1-6
Keywords biomedical measurement; dosimeters; dosimetry; photodetectors; photodiodes; radiation therapy; photodetectors array; sensor characterization; Commercial Of The Shelf photodiodes; 1D dosimeter array; dose spatial distribution; radiotherapy irradiation field; teletherapy source; gamma rays; beam profile measurements; dose resolution; acquisition electronics; radiation absorbed dose 0.06 cGy; Photodiodes; Sensitivity; Current measurement; Detectors; Radiation effects; Voltage measurement; Multiplexing; Radiotherapy; Ionizing Radiation; Photodiodes; Quality Assurance.
Abstract In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.
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Series Editor Series Title Abbreviated Series Title 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)
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Call Number BT @ pedrazp @ Serial 832
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Author (up) Watt
Title Photoinduced changes in Raman spectra of YBa2Cu3O6.4 films Type Journal Article
Year 1994 Publication Journal of Superconductivity Abbreviated Journal J Supercond
Volume 7 Issue 1 Pages 131-136
Keywords Electronic Raman scattering; oxygen ordering; photoinduced superconductivity; two-magnon scattering; Copper oxides; Radiation effects; Raman spectroscopy; Superconducting films; Superconductivity; Oxide superconductors; Photoinduced effects; Yttrium barium cuprates; High temperature superconductors
Abstract The evolution of Raman spectra with illumination has been studied in YBa2Cu3O6.4 films at temperatures between 5-300 K. Low laser power has always been used to avoid local overheating, which was controlled by measuring the local temperature by the Stokes/anti-Stokes ratio. Three important photoinduced effects have been found: (i) the enhancement of the intensity of the observed phonon modes: (Cu(2) at 141 cm-1, O(2)-O(3) at 338 cm-1, and O(4) at 488 cm-1), which may be related to the ordering of oxygen vacancies, (ii) the increase of the electronic scattering background for low Raman frequencies ?, which is in agreement with the enhancement of the static conductivity ?(??0) after illumination, and (iii) the suppression of the intensity of the two-magnon band, which may be caused by the increase of charge carriers due to photodoping.
Address Laboratorium voor Vaste Stof-Fysika en Magnetisme, KU Leuven, Leuven, B-3001, Belgium
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Publisher Kluwer Academic Publishers-Plenum Publishers Place of Publication Editor
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Series Editor Series Title Abbreviated Series Title
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ISSN 08961107 (ISSN) ISBN Medium
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Notes Cited By (since 1996): 11; Export Date: 17 April 2009; Source: Scopus; CODEN: JOUSE; doi: 10.1007/BF00730383; Language of Original Document: English; Correspondence Address: Watt Approved no
Call Number BT @ osquigui @ Serial 396
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