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Author  |
Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application |
Type |
Journal Article |
| Year |
2019 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Transactions on Nuclear Science |
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Issue |
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Pages |
1-1 |
| Keywords |
Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator |
| Abstract |
We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA. |
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BT @ pedrazp @ |
Serial |
841 |
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Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement |
Type |
Conference Article |
| Year |
2018 |
Publication |
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
Abbreviated Journal |
2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
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Issue |
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Pages |
1-3 |
| Keywords |
dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi |
| Abstract |
Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode. |
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2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) |
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BT @ pedrazp @ |
Serial |
839 |
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Alcalde Bessia, F.; Pérez, M.; Gomez Berisso, M.; Piunno, N.; Mateos, H.; Pomiro, F.J.; Sidelnik, I.; Blostein, J.J.; Sofo Haro, M.; Lipovetzky, J. |
| Title |
X-ray micrographic imaging system based on COTS CMOS sensors |
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Conference Article |
| Year |
2017 |
Publication |
2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) |
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Pages |
1-4 |
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biological techniques; biology computing; CMOS image sensors; image processing equipment; X-ray imaging; X-ray image acquisition; X-ray micrographic imaging system; Commercial Off The Shelf CMOS image sensors; biology; paleontology research; scintillator conversion layers; electronic components inspection; COTS CMOS sensors; electron volt energy 8.0 keV; Photonics; X-ray imaging; Silicon; Attenuation; Detectors; Image sensors; Cmos; Vlsi; X-ray applications; Biomedical imaging; CMOS image sensors |
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This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers. |
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2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) |
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BT @ pedrazp @ |
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831 |
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Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation |
Type |
Journal Article |
| Year |
2018 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Transactions on Nuclear Science |
| Volume |
65 |
Issue |
11 |
Pages |
2793-2801 |
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alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays |
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In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture. |
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BT @ pedrazp @ |
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835 |
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| Author |
Antonio, D.; Dolz, M.I.; Pastoriza, H. |
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Micromechanical magnetometer using an all-silicon nonlinear torsional resonator |
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Journal Article |
| Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
95 |
Issue |
13 |
Pages |
133505-3 |
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damping; eddy currents; elemental semiconductors; magnetometers; micromechanical devices; nonlinear dynamical systems; oscillations; Q-factor; resonators; silicon |
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In this work, a micromagnetometer employing a nonlinear torsional resonator with a high quality factor Q is presented experimentally. Oscillatory rotation of a conducting plate in the sensed magnetic field H induces eddy currents that dissipate energy. Due to the nonlinear response of the oscillator, the resulting mechanical damping originates frequency shifts in the resonance curve that depend on H. Nonlinearity results from the electrostatic detection, which introduces high order electrical spring constants. The device is fabricated with a standard silicon process and does not incorporate ferromagnetic materials. An analytical nonlinear model that correctly describes the device is also introduced. |
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AIP |
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BT @ hernan @ |
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564 |
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Frank, V.L.P.; de la Cruz, M.E. |
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Low temperature specific heat of Dow Corning Silicon Oil No 704 between 2 and 18 K |
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Journal Article |
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1984 |
Publication |
Cryogenics |
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24 |
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6 |
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311-312 |
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cryogenics; specific heat; silicon oil |
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The specific heat of Dow Corning Silicon Oil No 704 was measured between 2 and 18 K. Below 5 K it was found to follow a T3 law. Throughout the range it could be fitted with a 5th order polynomial in T. |
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0011-2275 |
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BT @ pedrazp @ |
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527 |
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Galimberti, C.L.; Alcalde Bessia, F.; Perez, M.; Gómez Berisso, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Asorey, H.; Lipovetzky, J. |
| Title |
A Low Cost Environmental Ionizing Radiation Detector Based on COTS CMOS Image Sensors |
Type |
Conference Article |
| Year |
2018 |
Publication |
2018 IEEE Biennial Congress of Argentina (ARGENCON) |
Abbreviated Journal |
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Issue |
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1-6 |
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CMOS image sensors; particle detectors; radiation detection; low cost environmental ionizing radiation detector; COTS CMOS image sensors; geometrical characteristics; alpha particles; radiation sources; Raspberry Pi3 computer; Omnivision OV5647 commercial off the shelf image sensor; X-ray photon; gamma photons; OpenCV library; size 241.0 am; Detectors; Software; Image sensors; Alpha particles; Prototypes; Silicon; Image color analysis |
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We present the development of a system for the detection of ionizing radiation based on the Omnivision OV5647 Commercial Off The Shelf image sensor. The data is read and processed in real-time using a Raspberry Pi 3 computer. The amount of charge and geometrical characteristics of the cluster of pixels exited when a particle interacts with the sensor is recorded and used to identify the type of incoming particle, distinguishing between alpha particles and X-ray or gamma photons. The software was programmed in C using the OpenCV library. The system was tested with 137Cs and 241Am radiation sources. |
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2018 IEEE Biennial Congress of Argentina (ARGENCON) |
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BT @ pedrazp @ |
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836 |
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Pedrazzini, P.; Jaccard, D.; Lapertot, G.; Flouquet, J.; Inada, Y.; Kohara, H.; Onuki, Y. |
| Title |
Probing the extended non-Fermi liquid regimes of MnSi and Fe |
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Journal Article |
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2006 |
Publication |
Physica B – Condensed Matter |
Abbreviated Journal |
Physica B |
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378-380 |
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Pages |
165-166 |
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electrical resistivity; Fermi liquid; ferromagnetic materials; high-pressure effects; iron; magnetic superconductors; manganese alloys; silicon alloys; strongly correlated electron systems; superconducting transition temperature; superconducting transitions; whiskers; MnSi; Fe |
| Abstract |
Recent studies show that the non-Fermi liquid (NFL) behavior of MnSi and Fe spans over an unexpectedly broad pressure range, between the critical pressure p and around 2p. In order to determine the extension of their NFL regions, we analyze the evolution of the resistivity ρ(T)˜A(p)T at higher pressures. We find that in MnSi the n=32 exponent holds below 4.8GPa≈3p, but it increases above that pressure. At 7.2 GPa we observe the low-temperature Fermi liquid exponent n=2 whereas for T>1.5K, n=53. Our measurements in Fe show that the NFL behavior ρ˜T extends at least up to 30.5 GPa, above the entire superconducting (SC) region. In the studied pressure range, the onset of the SC transition reduces by a factor 10 down to Tconset(30.5GPa)=0.23K, while the A—coefficient diminishes monotonically by around 50%. |
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BT @ pedrazp @ |
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469 |
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Sarkar, R.; Baenitz, M.; Sereni, J.G.; Geibel, C. |
| Title |
29Si NMR study of the heavy fermion system CeRuSi |
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Journal Article |
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2010 |
Publication |
Journal of Physics: Conference Series |
Abbreviated Journal |
J. Phys. Conf. Ser. |
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200 |
Issue |
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012173 |
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Basal planes; Energy scale; Heavy fermion systems; High-T; Kondo temperatures; Local probes; Low energies; NMR studies; Powder spectra; Drops; Silicon |
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A recent investigation of the low temperature properties of the paramagnetic heavy fermion system CeRuSi revealed an anomalous decrease of the coefficient C/T below 6 K, indicating a second low energy scale well below the Kondo temperature of about 50 K. We started an investigation of this unusual behavior using the local probe 29Si-NMR. Here a preliminary 29Si field sweep NMR study in the temperature 4.2-200 K is reported. 29Si-NMR powder spectra obtained at 72.9 MHz could be simulated and shift components 29Kab(T) and 29K c(T) were determined. The shift along the basal plane 29Kab(T) shows the expected behavior with a Curie-Weiss dependence at high T merging in a constant value below 15 K. In contrast the shift along the tetragonal axis reveals an anomalous T dependence below 15 K where 29Kc(T) drops by a factor of 2, confirming the presence of a further low T energy scale. We suspect this drop to be related to the anomalous decrease of C/T below 6 K and discuss possible mechanism. © 2010 IOP Publishing Ltd. |
| Address |
Divisin Bajas Temperaturas, Centro Atmico Bariloche, Comisin Nacional de Energia Atmica, cc 439, 8400 San Carlos de Bariloche, Argentina |
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Karlsruhe |
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International Conference on Magnetism, ICM 2009 |
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200 |
Series Issue |
SECTION 1 |
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17426588 (ISSN) |
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Conference code: 81773; Export Date: 10 December 2010; Source: Scopus; Art. No.: 012173; doi: 10.1088/1742-6596/200/1/012173; Language of Original Document: English; Correspondence Address: Sarkar, R.; Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany; email: rajibsarkarsinp@gmail.com; References: Sereni, J.G., J. Phys.: Condens. Matter., , submitted to; Welter, R., (1992) J. Alloys Comput., 189 (1), p. 49; Chevalier, B., (2008) Phys. Rev., 77 (1), p. 014414; Rebelsky, L., (1988) J. Appl.Phys., 63 (8), p. 3405; Kitaoka, Y., (1985) J. Phys. Soc. Japan., 54 (9), p. 3236; Krishna-Murthy, H.R., (1975) Phys. Rev. Lett., 35 (16), p. 1101; Chevalier, B., (2006) Physica, 378-380, p. 795; Kim, J.K., Troyer, M., (1998) Phys. Rev. Letter, 80 (12), p. 2705 |
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BT @ berisso @ |
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598 |
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