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Author Antonio, D.; Dolz, M.I.; Pastoriza, H.
Title Micromechanical magnetometer using an all-silicon nonlinear torsional resonator Type Journal Article
Year 2009 Publication Applied Physics Letters Abbreviated Journal Appl. Phys. Lett.
Volume 95 Issue 13 Pages (down) 133505-3
Keywords damping; eddy currents; elemental semiconductors; magnetometers; micromechanical devices; nonlinear dynamical systems; oscillations; Q-factor; resonators; silicon
Abstract In this work, a micromagnetometer employing a nonlinear torsional resonator with a high quality factor Q is presented experimentally. Oscillatory rotation of a conducting plate in the sensed magnetic field H induces eddy currents that dissipate energy. Due to the nonlinear response of the oscillator, the resulting mechanical damping originates frequency shifts in the resonance curve that depend on H. Nonlinearity results from the electrostatic detection, which introduces high order electrical spring constants. The device is fabricated with a standard silicon process and does not incorporate ferromagnetic materials. An analytical nonlinear model that correctly describes the device is also introduced.
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Call Number BT @ hernan @ Serial 564
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Author Sarkar, R.; Baenitz, M.; Sereni, J.G.; Geibel, C.
Title 29Si NMR study of the heavy fermion system CeRuSi Type Journal Article
Year 2010 Publication Journal of Physics: Conference Series Abbreviated Journal J. Phys. Conf. Ser.
Volume 200 Issue Pages (down) 012173
Keywords Basal planes; Energy scale; Heavy fermion systems; High-T; Kondo temperatures; Local probes; Low energies; NMR studies; Powder spectra; Drops; Silicon
Abstract A recent investigation of the low temperature properties of the paramagnetic heavy fermion system CeRuSi revealed an anomalous decrease of the coefficient C/T below 6 K, indicating a second low energy scale well below the Kondo temperature of about 50 K. We started an investigation of this unusual behavior using the local probe 29Si-NMR. Here a preliminary 29Si field sweep NMR study in the temperature 4.2-200 K is reported. 29Si-NMR powder spectra obtained at 72.9 MHz could be simulated and shift components 29Kab(T) and 29K c(T) were determined. The shift along the basal plane 29Kab(T) shows the expected behavior with a Curie-Weiss dependence at high T merging in a constant value below 15 K. In contrast the shift along the tetragonal axis reveals an anomalous T dependence below 15 K where 29Kc(T) drops by a factor of 2, confirming the presence of a further low T energy scale. We suspect this drop to be related to the anomalous decrease of C/T below 6 K and discuss possible mechanism. © 2010 IOP Publishing Ltd.
Address Divisin Bajas Temperaturas, Centro Atmico Bariloche, Comisin Nacional de Energia Atmica, cc 439, 8400 San Carlos de Bariloche, Argentina
Corporate Author Thesis
Publisher Place of Publication Karlsruhe Editor
Language Summary Language Original Title
Series Editor Series Title International Conference on Magnetism, ICM 2009 Abbreviated Series Title
Series Volume 200 Series Issue SECTION 1 Edition
ISSN 17426588 (ISSN) ISBN Medium
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Notes Conference code: 81773; Export Date: 10 December 2010; Source: Scopus; Art. No.: 012173; doi: 10.1088/1742-6596/200/1/012173; Language of Original Document: English; Correspondence Address: Sarkar, R.; Max-Planck Institute for Chemical Physics of Solids, 01187 Dresden, Germany; email: rajibsarkarsinp@gmail.com; References: Sereni, J.G., J. Phys.: Condens. Matter., , submitted to; Welter, R., (1992) J. Alloys Comput., 189 (1), p. 49; Chevalier, B., (2008) Phys. Rev., 77 (1), p. 014414; Rebelsky, L., (1988) J. Appl.Phys., 63 (8), p. 3405; Kitaoka, Y., (1985) J. Phys. Soc. Japan., 54 (9), p. 3236; Krishna-Murthy, H.R., (1975) Phys. Rev. Lett., 35 (16), p. 1101; Chevalier, B., (2006) Physica, 378-380, p. 795; Kim, J.K., Troyer, M., (1998) Phys. Rev. Letter, 80 (12), p. 2705 Approved no
Call Number BT @ berisso @ Serial 598
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Author Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J.
Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume 65 Issue 11 Pages (down) 2793-2801
Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays
Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Call Number BT @ pedrazp @ Serial 835
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Author Frank, V.L.P.; de la Cruz, M.E.
Title Low temperature specific heat of Dow Corning Silicon Oil No 704 between 2 and 18 K Type Journal Article
Year 1984 Publication Cryogenics Abbreviated Journal
Volume 24 Issue 6 Pages (down) 311-312
Keywords cryogenics; specific heat; silicon oil
Abstract The specific heat of Dow Corning Silicon Oil No 704 was measured between 2 and 18 K. Below 5 K it was found to follow a T3 law. Throughout the range it could be fitted with a 5th order polynomial in T.
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ISSN 0011-2275 ISBN Medium
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Call Number BT @ pedrazp @ Serial 527
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Author Pedrazzini, P.; Jaccard, D.; Lapertot, G.; Flouquet, J.; Inada, Y.; Kohara, H.; Onuki, Y.
Title Probing the extended non-Fermi liquid regimes of MnSi and Fe Type Journal Article
Year 2006 Publication Physica B – Condensed Matter Abbreviated Journal Physica B
Volume 378-380 Issue Pages (down) 165-166
Keywords electrical resistivity; Fermi liquid; ferromagnetic materials; high-pressure effects; iron; magnetic superconductors; manganese alloys; silicon alloys; strongly correlated electron systems; superconducting transition temperature; superconducting transitions; whiskers; MnSi; Fe
Abstract Recent studies show that the non-Fermi liquid (NFL) behavior of MnSi and Fe spans over an unexpectedly broad pressure range, between the critical pressure p and around 2p. In order to determine the extension of their NFL regions, we analyze the evolution of the resistivity ρ(T)˜A(p)T at higher pressures. We find that in MnSi the n=32 exponent holds below 4.8GPa≈3p, but it increases above that pressure. At 7.2 GPa we observe the low-temperature Fermi liquid exponent n=2 whereas for T>1.5K, n=53. Our measurements in Fe show that the NFL behavior ρ˜T extends at least up to 30.5 GPa, above the entire superconducting (SC) region. In the studied pressure range, the onset of the SC transition reduces by a factor 10 down to Tconset(30.5GPa)=0.23K, while the A—coefficient diminishes monotonically by around 50%.
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Call Number BT @ pedrazp @ Serial 469
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Author Alcalde Bessia, F.; Pérez, M.; Gomez Berisso, M.; Piunno, N.; Mateos, H.; Pomiro, F.J.; Sidelnik, I.; Blostein, J.J.; Sofo Haro, M.; Lipovetzky, J.
Title X-ray micrographic imaging system based on COTS CMOS sensors Type Conference Article
Year 2017 Publication 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA) Abbreviated Journal
Volume Issue Pages (down) 1-4
Keywords biological techniques; biology computing; CMOS image sensors; image processing equipment; X-ray imaging; X-ray image acquisition; X-ray micrographic imaging system; Commercial Off The Shelf CMOS image sensors; biology; paleontology research; scintillator conversion layers; electronic components inspection; COTS CMOS sensors; electron volt energy 8.0 keV; Photonics; X-ray imaging; Silicon; Attenuation; Detectors; Image sensors; Cmos; Vlsi; X-ray applications; Biomedical imaging; CMOS image sensors
Abstract This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers.
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Series Editor Series Title Abbreviated Series Title 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)
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Call Number BT @ pedrazp @ Serial 831
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Author Galimberti, C.L.; Alcalde Bessia, F.; Perez, M.; Gómez Berisso, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Asorey, H.; Lipovetzky, J.
Title A Low Cost Environmental Ionizing Radiation Detector Based on COTS CMOS Image Sensors Type Conference Article
Year 2018 Publication 2018 IEEE Biennial Congress of Argentina (ARGENCON) Abbreviated Journal
Volume Issue Pages (down) 1-6
Keywords CMOS image sensors; particle detectors; radiation detection; low cost environmental ionizing radiation detector; COTS CMOS image sensors; geometrical characteristics; alpha particles; radiation sources; Raspberry Pi3 computer; Omnivision OV5647 commercial off the shelf image sensor; X-ray photon; gamma photons; OpenCV library; size 241.0 am; Detectors; Software; Image sensors; Alpha particles; Prototypes; Silicon; Image color analysis
Abstract We present the development of a system for the detection of ionizing radiation based on the Omnivision OV5647 Commercial Off The Shelf image sensor. The data is read and processed in real-time using a Raspberry Pi 3 computer. The amount of charge and geometrical characteristics of the cluster of pixels exited when a particle interacts with the sensor is recorded and used to identify the type of incoming particle, distinguishing between alpha particles and X-ray or gamma photons. The software was programmed in C using the OpenCV library. The system was tested with 137Cs and 241Am radiation sources.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Biennial Congress of Argentina (ARGENCON)
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Call Number BT @ pedrazp @ Serial 836
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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages (down) 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
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Call Number BT @ pedrazp @ Serial 839
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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science
Volume Issue Pages (down) 1-1
Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator
Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Call Number BT @ pedrazp @ Serial 841
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