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Author Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J.
Title Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement Type Conference Article
Year 2018 Publication 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC) Abbreviated Journal 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Volume Issue Pages 1-3
Keywords dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; Université Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi
Abstract Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 839
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Author Mateos, H.; Lipovetzky, J.; Alcalde Bessia, F.; Perez, M.; Cappagli, P.; Gomez Berisso, M.
Title Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy Type Conference Article
Year 2017 Publication 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE) Abbreviated Journal
Volume Issue Pages 1-6
Keywords biomedical measurement; dosimeters; dosimetry; photodetectors; photodiodes; radiation therapy; photodetectors array; sensor characterization; Commercial Of The Shelf photodiodes; 1D dosimeter array; dose spatial distribution; radiotherapy irradiation field; teletherapy source; gamma rays; beam profile measurements; dose resolution; acquisition electronics; radiation absorbed dose 0.06 cGy; Photodiodes; Sensitivity; Current measurement; Detectors; Radiation effects; Voltage measurement; Multiplexing; Radiotherapy; Ionizing Radiation; Photodiodes; Quality Assurance.
Abstract In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.
Address
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)
Series Volume Series Issue Edition
ISSN ISBN Medium
Area Expedition Conference
Notes Approved no
Call Number BT @ pedrazp @ Serial 832
Permanent link to this record