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Author Zarate, J.J.; Pastoriza, H.
Title (up) Correction algorithm for the proximity effect in e-beam lithography Type Conference Article
Year 2008 Publication Micro-Nanoelectronics, Technology and Applications, 2008. EAMTA 2008. Argentine School of Abbreviated Journal
Volume Issue Pages 38-42
Keywords electron beam lithography, proximity effect (lithography)correction algorithm, e-beam lithography, irradiated dose, numerical algorithm, pattern transfer, proximity effect, resist sensitivity
Abstract e-beam lithography is a technique capable of fabricate sub-micrometer planar structures. The ultimate resolution in this technique is limited mainly by the proximity effect where the dose accumulated in one spacial point is affected by the irradiated dose in its neighborhood. The relevance of this effect in one particular pattern strongly depends on its geometry, the sensitivity of the resist and the physical characteristics of the substrate. In this work we present a numerical algorithm to calculate the nominal dose needed to be applied in each point of the geometry that results in an optimal net dose for an efficient pattern transfer.
Corporate Author Thesis
Publisher Place of Publication Editor
Language Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
Series Volume Series Issue Edition
Area Expedition Conference EAMTA 2008
Notes Approved no
Call Number BT @ hernan @ zarate08 Serial 46
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