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Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. |
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Title |
Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation |
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Journal Article |
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2018 |
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IEEE Transactions on Nuclear Science |
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IEEE Transactions on Nuclear Science |
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65 |
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11 |
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2793-2801 |
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alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays |
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Abstract |
In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture. |
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BT @ pedrazp @ |
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835 |
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