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Author (down) Benfica, J.; Green, B.; Porcher, B.C.; Bolzani Poehls, L.; Vargas, F.; Medina, N.H.; Added, N.; de Aguiar, V.A.P.; Macchione, E.L.A.; Aguirre, F.; Silveira, M.A.G.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Lipovetzky, J.; Bezerra, E.A. openurl 
  Title Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects Type Journal Article
  Year 2016 Publication IEEE Transactions on Nuclear Science Abbreviated Journal  
  Volume 63 Issue Pages 1294  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 753  
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Author (down) Alcalde Bessia, F.; Pérez, M.; Sofo Haro, M.; Sidelnik, I.; Blostein, J.J.; Suárez, S.; Pérez, P.; Gómez Berisso, M.; Lipovetzky, J. doi  openurl
  Title Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation Type Journal Article
  Year 2018 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume 65 Issue 11 Pages 2793-2801  
  Keywords alpha-particle effects; boron; CMOS image sensors; lithium; neutron capture therapy; neutron effects; Rutherford backscattering; silicon; boron-10 thermal neutron capture; displacement damage; alpha particles irradiation; dark signal; thermal neutron irradiation; CMOS image sensors; Ionizing radiation; Thermal sensors; Radiation effects; Alpha particles; CMOS image sensors; Active pixel sensors; CMOS technology; X-rays; Active pixel sensors; alpha particles; borophosphosilicate-glass (BPSG); CMOS image sensors; CMOS technology; ionizing radiation; neutron radiation effects; thermal neutron; X-rays  
  Abstract In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.  
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  Call Number BT @ pedrazp @ Serial 835  
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Author (down) Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. url  doi
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  Title Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application Type Journal Article
  Year 2019 Publication IEEE Transactions on Nuclear Science Abbreviated Journal IEEE Transactions on Nuclear Science  
  Volume Issue Pages 1-1  
  Keywords Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator  
  Abstract We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.  
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  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 841  
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