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Author (up) Osquiguil, E.; Tosi, L.; Kaul, E.E.; Balseiro, C.A. doi  openurl
  Title On the origin of the low temperatures resistivity minimum in Cr thin films Type Journal Article
  Year 2013 Publication Journal Of Applied Physics Abbreviated Journal J. Appl. Phys.  
  Volume 114 Issue 24 Pages 7 pp  
  Abstract We present measurements of the electrical resistivity and Hall coefficient, p and R-H, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in rho(T), which is thickness dependent. From 40K to 2K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature T-min, where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture. (C) 2013 AI Publishing LLC.  
  Address [Osquiguil, E.] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina  
  Corporate Author Thesis  
  Publisher Amer Inst Physics Place of Publication Editor  
  Language English Summary Language Original Title  
  Series Editor Series Title Abbreviated Series Title  
  Series Volume Series Issue Edition  
  ISSN 0021-8979 ISBN Medium  
  Area Expedition Conference  
  Notes WOS:000329173200042 Approved no  
  Call Number BT @ hernan @ Serial 682  
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