| Record |
| Author |
Osquiguil, E.; Tosi, L.; Kaul, E.E.; Balseiro, C.A. |
| Title |
On the origin of the low temperatures resistivity minimum in Cr thin films |
Type |
Journal Article |
| Year |
2013 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J. Appl. Phys. |
| Volume |
114 |
Issue |
24 |
Pages |
7 pp |
Keywords  |
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| Abstract |
We present measurements of the electrical resistivity and Hall coefficient, p and R-H, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in rho(T), which is thickness dependent. From 40K to 2K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature T-min, where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture. (C) 2013 AI Publishing LLC. |
| Address |
[Osquiguil, E.] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina |
| Corporate Author |
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Thesis |
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| Publisher |
Amer Inst Physics |
Place of Publication |
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Editor |
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| Language |
English |
Summary Language |
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Original Title |
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| Series Editor |
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Series Title |
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Abbreviated Series Title |
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| Series Volume |
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Series Issue |
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Edition |
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| ISSN |
0021-8979 |
ISBN |
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Medium |
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| Area |
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Expedition |
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Conference |
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| Notes |
WOS:000329173200042 |
Approved |
no |
| Call Number |
BT @ hernan @ |
Serial |
682 |
| Permanent link to this record |
