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Author |
Osquiguil, E.; Tosi, L.; Kaul, E.E.; Balseiro, C.A. |
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Title |
On the origin of the low temperatures resistivity minimum in Cr thin films |
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Journal Article |
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Year |
2013 |
Publication |
Journal Of Applied Physics |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
114 |
Issue |
24 |
Pages |
7 pp |
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Abstract |
We present measurements of the electrical resistivity and Hall coefficient, p and R-H, in Cr films of different thicknesses grown on MgO (100) substrates, as a function of temperature T and applied magnetic field H. The results show a low temperature minimum in rho(T), which is thickness dependent. From 40K to 2K, the Hall coefficient is a monotonous increasing function as T is reduced with no particular signature at the temperature T-min, where the minimum develops. We explain the resistivity minimum assuming an imperfect nesting of the Fermi surface leading to small electron and hole pockets. We introduce a phenomenological model which supports this simple physical picture. (C) 2013 AI Publishing LLC. |
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Address |
[Osquiguil, E.] Comis Nacl Energia Atom, Ctr Atom Bariloche, RA-8400 San Carlos De Bariloche, Rio Negro, Argentina |
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Publisher |
Amer Inst Physics |
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Language |
English |
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Original Title |
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Series Volume |
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Edition |
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ISSN |
0021-8979 |
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Notes |
WOS:000329173200042 |
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no |
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Call Number |
BT @ hernan @ |
Serial  |
682 |
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