| Record |
| Author |
Alcalde Bessia, F.; Flandre, D.; André, N.; Irazoqui, J.; Pérez, M.; Gómez Berisso, M.; Lipovetzky, J. |
| Title |
Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application |
Type |
Journal Article |
| Year |
2019 |
Publication |
IEEE Transactions on Nuclear Science |
Abbreviated Journal |
IEEE Transactions on Nuclear Science |
| Volume |
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Issue |
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1-1 |
| Keywords |
Transistors; Temperature measurement; Voltage measurement; Threshold voltage; Radiation effects; Current measurement; Semiconductor device measurement; Silicon radiation detectors; Ionizing radiation sensors; Silicon-on-insulator |
| Abstract |
We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA. |
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BT @ pedrazp @ |
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841 |
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