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Author (up) Haberkorn, N.; Xu, M.; Meier, WR; Suárez, S.; Bud’ko, S.L.; Canfield, P.C. url  doi
  Title Enhancement of critical current density in CaKFe4As4 single crystals through 3 MeV proton irradiation Type Journal Article
  Year 2020 Publication Superconductor Science and Technology Abbreviated Journal Supercond. Sci. Technol.  
  Volume 33 Issue 2 Pages 025008  
  Abstract We study the influence of random point disorder on the vortex dynamics and critical current densities Jc of CaKFe4As4 single crystals by performing magnetization measurements. Different samples were irradiated with a proton (p) beam at constant energy of 3 MeV to fluencies from 2 × 1015 p cm−2 to 4 × 1016 p cm−2. The results show the addition of extrinsic random point disorder enhances the Jc values at low and intermediate temperatures over the entire range of magnetic fields applied. The optimum pinning enhancement is achieved with a proton fluence of 3 × 1016 p cm−2, increasing Jc at 5 K by factors ≈5 and 14 at self-field and μ0H = 3 T, respectively. We analyze the vortex dynamics using the collective creep theory. The enhancement in Jc matches with a systematic reduction in the flux creep relaxation rates as a consequence of a gradual increase in the collective pinning energy U0. The substantial increment in Jc produced by random point disorder, reaching values of 9 MA cm−2 at 5 K and self-field, makes CaKFe4As4 a promising material for applications based on current carrying capacity at high magnetic fields.  
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  Series Volume Series Issue Edition  
  ISSN 0953-2048 ISBN Medium  
  Area Expedition Conference  
  Notes Approved no  
  Call Number BT @ pedrazp @ Serial 857  
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