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Lipovetzky, J., A. Cicuttin, M. L. Crespo, M. Sofo Haro, F. Alcalde Bessia, M. Pérez, and M. Gómez Berisso. "Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor." Radiation Physics and Chemistry 167 (2020): 108244.
Abstract: In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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Pérez, M., M. S. Haro, J. Lipovetzky, A. Cicuttin, M. L. Crespo, F. Alcade Bessia, M. Gómez Berisso, and J. J. Blostein. "Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV." Radiation Physics and Chemistry 177 (2020): 109062.
Abstract: We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines.
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