Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application." IEEE Transactions on Nuclear Science (2019): 1.
Abstract: We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018.
Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Alcalde Bessia, F., M. Pérez, M. Gomez Berisso, N. Piunno, H. Mateos, F. J. Pomiro, I. Sidelnik, J. J. Blostein, M. Sofo Haro, and J. Lipovetzky. "X-ray micrographic imaging system based on COTS CMOS sensors." In 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA), 1–4. 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)., 2017.
Abstract: This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers.
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Alcalde Bessia, F., M. Pérez, M. Sofo Haro, I. Sidelnik, J. J. Blostein, S. Suárez, P. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation." IEEE Transactions on Nuclear Science 65, no. 11 (2018): 2793–2801.
Abstract: In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Benfica, J., B. Green, B. C. Porcher, L. Bolzani Poehls, F. Vargas, N. H. Medina, N. Added, V. A. P. de Aguiar, E. L. A. Macchione, F. Aguirre et al. "Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects." IEEE Transactions on Nuclear Science 63 (2016): 1294.
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Galimberti, C. L., F. Alcalde Bessia, M. Perez, M. Gómez Berisso, M. Sofo Haro, I. Sidelnik, J. J. Blostein, H. Asorey, and J. Lipovetzky. "A Low Cost Environmental Ionizing Radiation Detector Based on COTS CMOS Image Sensors." In 2018 IEEE Biennial Congress of Argentina (ARGENCON), 1–6. 2018 IEEE Biennial Congress of Argentina (ARGENCON)., 2018.
Abstract: We present the development of a system for the detection of ionizing radiation based on the Omnivision OV5647 Commercial Off The Shelf image sensor. The data is read and processed in real-time using a Raspberry Pi 3 computer. The amount of charge and geometrical characteristics of the cluster of pixels exited when a particle interacts with the sensor is recorded and used to identify the type of incoming particle, distinguishing between alpha particles and X-ray or gamma photons. The software was programmed in C using the OpenCV library. The system was tested with 137Cs and 241Am radiation sources.
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Lipovetzky, J., F. Alcalde Bessia, J. Guimpel, M. Perez, and M. Gomez Berisso. "Characterization of a low-power CMOS operational amplifier from 12.5K to 273K for low temperature experiments." In 2020 Argentine Conference on Electronics (CAE), 73–76. IEEE, 2020.
Abstract: In this work, we present the design and first characterization of an operational amplifier for use at cryogenic temperatures. We show the functionality of the amplifier in a range of temperatures from 12.5K to 273K. Drain current to gate voltage curves of n-channel and p-channel MOS transistors, resistors and the amplifier response were measured. The circuit allows the amplification of signals up to 100kHz with a power consumption of 48μW.
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Lipovetzky, J., A. Cicuttin, M. L. Crespo, M. Sofo Haro, F. Alcalde Bessia, M. Pérez, and M. Gómez Berisso. "Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor." Radiation Physics and Chemistry 167 (2020): 108244.
Abstract: In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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Mateos, H., J. Lipovetzky, F. Alcalde Bessia, M. Perez, P. Cappagli, and M. Gomez Berisso. "Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy." In 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE), 1–6. 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)., 2017.
Abstract: In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.
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Pérez Quintián, F., N. Calarco, A. Lutenberg, and J. Lipovetzky. "Performance of an optical encoder based on a nondiffractive beam implemented with a specific photodetection integrated circuit and a diffractive optical element." Applied Optics 54 (2015): 7240.
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