Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Ultra Low Power Ionizing Dose Sensor Based on Complementary Fully Depleted MOS Transistors for Radiotherapy Application." IEEE Transactions on Nuclear Science (2019): 1.
Abstract: We evaluate the use of the thick buried oxide (BOX) of Fully Depleted Silicon-on-Insulator (FD-SOI) transistors for Total Ionizing Dose (TID) measurements in a radiotherapy application. The devices were fabricated with a custom process in UniversitC) Catholique de Louvain (UCL) which allows to make accumulation mode PMOS transistors and inversion mode NMOS transistors. We characterized the temperature behavior of these devices and the response under X-ray radiation produced by an Elekta radiotherapy linear accelerator, and compared the obtained dose sensitivity to other published works. Taking advantage of these devices, an ultra low power MOS ionizing dose sensor, or MOS dosimeter, with inherent temperature compensation is presented. This dosimeter achieved a sensitivity of 154 mV/Gy with a temperature error factor of 13 mGy/°C and a current consumption below 1 nA.
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Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018.
Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Alcalde Bessia, F., M. Pérez, M. Gomez Berisso, N. Piunno, H. Mateos, F. J. Pomiro, I. Sidelnik, J. J. Blostein, M. Sofo Haro, and J. Lipovetzky. "X-ray micrographic imaging system based on COTS CMOS sensors." In 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA), 1–4. 2017 Argentine Conference of Micro-Nanoelectronics, Technology and Applications (CAMTA)., 2017.
Abstract: This paper presents the use of Commercial Off The Shelf CMOS image sensors for the acquisition of X-ray images with high spatial resolution. The X-ray images, with application in biology, electronic components inspection or paleontology research, are obtained with 8 keV photons from a Cu tube. The quantum efficiency of the detector is estimated using attenuation lengths of photons in the sensor, and compared to traditional scintillator conversion layers.
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Alcalde Bessia, F., M. Pérez, M. Sofo Haro, I. Sidelnik, J. J. Blostein, S. Suárez, P. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Displacement Damage in CMOS Image Sensors After Thermal Neutron Irradiation." IEEE Transactions on Nuclear Science 65, no. 11 (2018): 2793–2801.
Abstract: In this paper, CMOS image sensors were exposed to thermal neutrons observing an increase in the dark signal of many pixels. The effect was found to be similar to the damage caused by alpha particles irradiation. Rutherford backscattering spectroscopy (RBS) and SIMNRA simulation were used to confirm that the sensors contain boron in the insulation layers. The damage produced by thermal neutrons is explained as displacement damage caused by alpha particles and lithium-7 ions in the silicon active volume of the sensors after boron-10 thermal neutron capture.
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Benfica, J., B. Green, B. C. Porcher, L. Bolzani Poehls, F. Vargas, N. H. Medina, N. Added, V. A. P. de Aguiar, E. L. A. Macchione, F. Aguirre et al. "Analysis of SRAM-Based FPGA SEU Sensitivity to Combined EMI and TID-Imprinted Effects." IEEE Transactions on Nuclear Science 63 (2016): 1294.
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Lipovetzky, J., A. Cicuttin, M. L. Crespo, M. Sofo Haro, F. Alcalde Bessia, M. Pérez, and M. Gómez Berisso. "Multi-spectral X-ray transmission imaging using a BSI CMOS Image Sensor." Radiation Physics and Chemistry 167 (2020): 108244.
Abstract: In this work we study the performance to obtain X-ray images of a Back Side Illuminated CMOS Image Sensor, the Omnivision OV5647, empoying X-rays from tube with a palladium anode and voltages from 7.5 keV to 50 keV. The performance is compared with the Timepix detector operating in the Time Over Threshold mode. False color images are obtained using data from different energies and brightnesses, to fussion different information on the same picture. The different attenuations are analyzed and discussed in terms of the charge detection efficiency of the CMOS sensor, measured using Fluorescence X-rays and gamma rays from calibrated sources.
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N. Haberkorn, S. Bengio, H. Troiani, S. Suárez, P. D. Pérez, M. Sirena, J. Guimpel. "Synthesis of nanocrystalline delta-MoN by thermal annealing of amorphous thins films grown on (100) Si by reactive DC sputtering at room temperature." Thin Solid Films 660 (2018): 242–246.
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Pérez, M., J. J. Blostein, F. A. Bessia, A. Tartaglione, I. Sidelnik, M. S. Haro, S. Suárez, M. L. Gimenez, M. G. Berisso, and J. Lipovetzky. "Thermal neutron detector based on COTS CMOS imagers and a conversion layer containing Gadolinium." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 893 (2018): 157–163.
Abstract: In this work we will introduce a novel low cost position sensitive thermal neutron detection technique, based on a Commercial Off The Shelf CMOS image sensor covered with a Gadolinium containing conversion layer. The feasibility of the neutron detection technique implemented in this work has been experimentally demonstrated. A thermal neutron detection efficiency of 11.3% has been experimentally obtained with a conversion layer of 11.6 μm. It was experimentally verified that the thermal neutron detection efficiency of this technique is independent on the intensity of the incident thermal neutron flux, which was confirmed for conversion layers of different thicknesses. Based on the experimental results, a spatial resolution better than 25 μm is expected. This spatial resolution makes the proposed technique specially useful for neutron beam characterization, neutron beam dosimetry, high resolution neutron imaging, and several neutron scattering techniques.
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Pérez, M., M. S. Haro, J. Lipovetzky, A. Cicuttin, M. L. Crespo, F. Alcade Bessia, M. Gómez Berisso, and J. J. Blostein. "Evaluation of a Commercial Off The Shelf CMOS Image Sensor for X-ray spectroscopy up to 24.9 keV." Radiation Physics and Chemistry 177 (2020): 109062.
Abstract: We studied the X-ray spectroscopy capability and the detection efficiency of a low cost Commercial Off The Shelf CMOS Image Sensor (CIS) in the energy range from 6.4 to 24.9 keV using the fluorescence spectra emitted by FeNi, Cu, Zr, Pb, and Ag. The obtained results are compared with that obtained using a Silicon Drift Detector (SDD). We conclude that CIS is able to resolve fluorescence lines up to 17.7 keV but with a reduced detection efficiency. At lower energies, the energy resolution of the CIS is comparable to that obtained with the SDD. By the comparison of both detectors we also estimate the detection efficiency of the proposed method and the effective thickness of the CIS for all the measured X-ray lines.
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Pérez, M., J. Lipovetzky, M. Sofo Haro, I. Sidelnik, J. J. Blostein, F. Alcalde Bessia, and M. Gómez Berisso. "Particle detection and classification using commercial off the shelf CMOS image sensors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 827 (2016): 171.
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