Bressan, O. J., A. E. Ridner, C. A. Luengo, and B. Alascio. "On the evidence for electron-electron scattering in the electrical resistivity of In." Solid State Communications 8, no. 24 (1970): 2129–2133.
Abstract: Experimental measurements of the electrical magnetoresistivity of high purity Indium at low temperatures have been performed and clearly indicate that:
1. (a) A generalized Kohler's rule can be used to describe all experiments.
2. (b) A reliable method is therefore obtained for extrapolating the zero magnetic field resistivity to temperatures below the superconducting transition temperature.
3. (c) Clear-cut and reliable data show that no T2 dependence of the resistance is found; therefore no evidence of electron-electron interaction appears, contrary to information previously reported in the literature.
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Ridner, A. E., O. J. Bressan, and J. M. Cotignola. "A high performance throttle valve." Vacuum 22, no. 2 (1972): 51.
Abstract: Design details and working performance of a logarithmic throttle valve with a large range are given. Special features make the logarithmic valve particularly suitable for servomechanism operation in controlled systems.
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Bressan, O. J., A. E. Ridner, and F. de la Cruz. "T^5 law and Matthiessen's rule." Journal of Physics F: Metal Physics 5, no. 3 (1975): 481.
Abstract: Precise electrical resistivity measurements on very dilute non magnetic indium alloys show no doubt in a T 5 dependence on temperature between 1-4K and strong deviations from Matthiessen rule. Measurements of thermal resistivity show that the extrapolation method to obtain the data to H=0 is correct. Comparison of the results with recent theories is discussed.
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Bressan, O. J., A. E. Ridner, and F. de la Cruz. "Low angle electron scattering in thermal resistivity." Journal of Physics F: Metal Physics 5 (1975): 1902–1909.
Abstract: Electrical ( rho ) and thermal (W) resistivity measurements in very dilute In alloys between 1K and 4K show a temperature dependence expressed by rho = rho 0+ beta T5 and WT=(WT)0+AT3+BT5. The BT5 term in the thermal resistivity is due to a contribution from a 'diffusion-like process' of electrons over the Fermi surface, as is the one that describes the temperature dependence of the electrical resistivity. This claim is supported by the experimental fact that the Lorenz number defined as L= beta /B coincides with the value given by L= rho 0/(WT)0 which in turn agrees with the free electron value within 15%.
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