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Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018.
Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Lederman, D., J. Hasen, I. K. Schuller, E. Osquiguil, and Y. Bruynseraede. "Photoinduced superconductivity and structural changes in high temperature superconducting films." Applied Physics Letters 64, no. 5 (1994): 652–654.
Abstract: The illumination of PryGd1-yBa2Cu 3Ox semiconducting and superconducting thin films increases their critical temperatures and decreases their normal state resistivities if and only if the films are oxygen deficient. Moreover, these changes are enhanced near the Pr-induced metal-insulator transition. Light also causes a contraction of the c-axis in YBa2Cu3Ox which is correlated with the observed photoinduced resistivity changes. These changes are similar to those observed when oxygen-deficient YBa 2Cu3Ox is enriched with oxygen or annealed at room temperature after quenching from high temperatures.
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Libbrecht, S., E. Osquiguil, B. Wuyts, M. Maenhoudt, Z. X. Gao, and Y. Bruynseraede. "Effect of room temperature annealing on the properties of oxygen- deficient YBa2Cu3Ox films." Physica C: Superconductivity and its applications 206, no. 1-2 (1993): 51–58.
Abstract: Annealing at room temperature of quenched oxygen-depleted YBa2Cu3Oxn (6.5?xn<6.8) films, produces a clear increase in the critical temperature Tc and current density Jc, while the normal state resistivity ?{variant}xx and Hall coefficient RH decrease as a function of annealing time, indicating an increase in carrier density. The enhancement of the critical current density Jc is more pronounced at high fields and temperatures due to a shift of the irreversibility line, which scales with the increasing Tc. The observed changes are accompanied by corresponding changes in the crystalline structure, which can be related to oxygen ordering effects.
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