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Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in UniversitÃ© Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.

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Abstract: Scanning probe microscopies typically rely on coarse-approach slip-stick piezoelectric motors that work by exciting piezoelectric stacks with sawtooth signals of hundreds of V and some kHz. For this application, we introduce a single-polarity high-voltage amplifier based on discrete MOSFET-technology components with improved output current desirable for low-temperature actuation. The amplifier has an output signal of 600 V, 100 mA output current, noise level below 2 Î¼V/math, 4 kHz high-voltage bandwidth, 2 V/Î¼s slew-rate, and rise and fall times of 80 Î¼s (when loaded with 30 nF). The circuit was successfully applied to drive a home-made scanning tunnelling microscope.

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	Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018. Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in UniversitÃ© Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode. Keywords: dosimeters; dosimetry; linear accelerators; Mosfet; radiation therapy; silicon-on-insulator; fully-Depleted SOI MOSFET sensors; accumulation mode; Fd-Soi; Elekta Synergy radiotherapy linear accelerator; buried oxide; radiation dosimeters; Total Ionizing Dose measurement; fully Depleted Silicon-on-Insulator transistors; UniversitÃ© Catholique de Louvain; I-V curves; BOX back-gate transistors; Transistors; Sensitivity; Logic gates; Radiation effects; Threshold voltage; Voltage measurement; Annealing; Radiation Dosimeter; Soi Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Atom XML MODS XML ODF XML Word XML
	Belussi, C. H., M. G. Berisso, and Y. Fasano. "Note: Single-polarity high-voltage amplifier to drive coarse-approach slip-stick piezoelectric motors." Review of Scientific Instruments 84, no. 5 (2013): 056104–3. Abstract: Scanning probe microscopies typically rely on coarse-approach slip-stick piezoelectric motors that work by exciting piezoelectric stacks with sawtooth signals of hundreds of V and some kHz. For this application, we introduce a single-polarity high-voltage amplifier based on discrete MOSFET-technology components with improved output current desirable for low-temperature actuation. The amplifier has an output signal of 600 V, 100 mA output current, noise level below 2 Î¼V/math, 4 kHz high-voltage bandwidth, 2 V/Î¼s slew-rate, and rise and fall times of 80 Î¼s (when loaded with 30 nF). The circuit was successfully applied to drive a home-made scanning tunnelling microscope. Keywords: amplifiers; Mosfet; piezoelectric motors; scanning probe microscopy Permanent link \| Save citation: RTF PDF LaTeX \| Export record: BibTeX Endnote ISI RIS Atom XML MODS XML ODF XML Word XML