Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018.
Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Mateos, H., J. Lipovetzky, F. Alcalde Bessia, M. Perez, P. Cappagli, and M. Gomez Berisso. "Characterization of sensors and design of an embedded photodetectors array for beam profile measurements in radiotherapy." In 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE), 1–6. 2017 Eight Argentine Symposium and Conference on Embedded Systems (CASE)., 2017.
Abstract: In this work, the dosimetric performance of several Commercial Of The Shelf photodiodes was studied. They were tested against gamma rays from a teletherapy source and were characterized with the aim of building a one-dimensional array of dosimeters able to measure the the spatial distribution of dose in a radiotherapy irradiation field. An embedded system comprising an array of 40 photodiodes and its acquisition electronics was built and tested. The dose resolution of each detector was 0.06 cGy and the spatial resolution of the system 0.5 cm.
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Zarate, J. J., and H. Pastoriza. "Correction algorithm for the proximity effect in e-beam lithography." In Micro-Nanoelectronics, Technology and Applications, 2008. EAMTA 2008. Argentine School of, 38–42., 2008.
Abstract: e-beam lithography is a technique capable of fabricate sub-micrometer planar structures. The ultimate resolution in this technique is limited mainly by the proximity effect where the dose accumulated in one spacial point is affected by the irradiated dose in its neighborhood. The relevance of this effect in one particular pattern strongly depends on its geometry, the sensitivity of the resist and the physical characteristics of the substrate. In this work we present a numerical algorithm to calculate the nominal dose needed to be applied in each point of the geometry that results in an optimal net dose for an efficient pattern transfer.
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