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Alcalde Bessia, F., D. Flandre, N. André, J. Irazoqui, M. Pérez, M. Gómez Berisso, and J. Lipovetzky. "Fully-Depleted SOI MOSFET Sensors in Accumulation Mode for Total Dose Measurement." In 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC), 1–3. 2018 IEEE Nuclear Science Symposium and Medical Imaging Conference Proceedings (NSS/MIC)., 2018.
Abstract: Fully Depleted Silicon-on-Insulator (FD-SOI) transistors fabricated with a custom process in Université Catholique de Louvain (UCL) were irradiated with X-rays using an Elekta Synergy radiotherapy linear accelerator. I-V curves of FD-SOI are sensitive to charges produced in the buried oxide (BOX) by ionizing radiation, so it is possible to use these devices as radiation dosimeters. In this work, we evaluated the use of thick BOX back-gate transistors for Total Ionizing Dose (TID) measurement using different bias conditions and we obtained a maximum sensitivity of 191 mV/Gy for devices operating in accumulation mode.
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Perez, M., J. Lipovetzky, M. Sofo Haro, I. Sidelnik, J. J. Blostein, F. Alcalde Bessia, and M. Gomez Berisso. "Particle detection and classification using commercial off the shelf CMOS image sensors." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 827 (2016): 171–180.
Abstract: Abstract
In this paper we analyse the response of two different Commercial Off The shelf CMOS image sensors as particle detectors. Sensors were irradiated using X-ray photons, gamma photons, beta particles and alpha particles from diverse sources. The amount of charge produced by different particles, and the size of the spot registered on the sensor are compared, and analysed by an algorithm to classify them. For a known incident energy spectrum, the employed sensors provide a dose resolution lower than microGray, showing their potentials in radioprotection, area monitoring, or medical applications.
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