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Maiorov, B., G. Nieva, and E. Osquiguil. "First-order phase transition of the vortex lattice in twinned YBa2Cu3O7 single crystals in tilted magnetic fields." Physical Review B – Condensed Matter and Materials Physics 61, no. 18 (2000): 12427–12432.
Abstract: We present an exhaustive analysis of transport measurements performed in twinned YBa2Cu3O7 single crystals which establishes that the vortex solid-liquid transition is first order when the magnetic field H is applied at an angle ? away from the direction of the twin planes. We show that the resistive transitions are hysteretic and the V-I curves are nonlinear, displaying a characteristic S shape at the melting line Hm(T), which scales as ?(?)Hm(T,?), where ?(?) is the anisotropy factor. These features are gradually lost when the critical point H*(?) is approached. Above H*(?) the V-I characteristics show a linear response in the experimentally accessible V-I window, and the transition becomes reversible. Finally we show that the first-order phase transition takes place between a highly correlated vortex liquid in the field direction and a solid state of unknown symmetry. As a consequence, our data support the scenario for a vortex-line melting in twinned YBa2Cu3O7 crystals in contrast to a vortex sublimation as recently suggested for untwinned La2-xSrxCuO4, YBa2Cu3O7 and Bi2Sr2CaCu2O8 [T. Sasagawa et al., Phys. Rev. Lett. 80, 4297 (1998)].
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Fainstein, A., B. Maiorov, J. Guimpel, G. Nieva, and E. Osquiguil. "Annealing disorder and photoinduced order of oxygen chains in detwinned YBa2Cu3O6.65 single crystals probed by Raman scattering." Physical Review B – Condensed Matter and Materials Physics 61, no. 6 (2000): 4298–4304.
Abstract: Raman scattering in detwinned YBa2Cu3O6.65 single crystals is studied as a function of photoexcitation and annealing. Copper-oxygen chain-related forbidden Raman bands that are known to strongly bleach with illumination at low temperatures, increase their intensity with chain fragmentation induced by annealing at high temperature. This contrasting behavior proves the conjunction of short Cu-O fragments into longer chains on photoexcitation. We interpret the Raman modes as due to vibrations at the end of CuO chain fragments and Cu-O-Cu monomers, and use their evolution with illumination and annealing as anisotropic sensitive markers of oxygen reordering processes. The identification of the “forbidden” Raman bands is discussed in the context of our results and recent literature in the subject. We also present absorption measurements performed on GdBa2Cu3Ox thin films with varying oxygen content. These experiments show that the 2.2-eV absorption and the chain-related Raman peaks have different dependencies with oxygen content and illumination, ruling out an explanation that suggests that the Raman intensity reduction of these modes is due to a photobleaching of intermediate defect states. These results highlight the potentialities of Raman scattering for oxygen dynamics studies and demonstrate the presence of photoinduced oxygen ordering in these high-Tc superconductor compounds.
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Decca, R. S., H. D. Drew, E. Osquiguil, B. Maiorov, and J. Guimpel. "Anomalous proximity effect in underdoped YBa2Cu3O6+x Josephson junctions." Physical Review Letters 85, no. 17 (2000): 3708–3711.
Abstract: Experiments were carried out to probe the underdoped insulating material by the Josephson effect. Junctions were fabricated by exploiting the capability of locally photodoping insulating RBa2Cu3O6+x (R = rare earth) material. The existence of an anomalously large proximity effect was confirmed. The critical current of the junctions was consisted with the conventional Josephson relationship.
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Sirena, M., L. Steren, and J. Guimpel. "Thickness dependence of the properties of La0.6Sr0.4MnO3 thin films." Thin Solid Films 373, no. 1-2 (2000): 102–106.
Abstract: We have studied the thickness dependence of the transport and magnetic properties of strongly textured La0.6Sr0.4MnO3 thin films grown on MgO and SrTiO3, for thickness between 5 and 500 nm. While the resistivity and the magnetoresistance are strongly affected, the magnetization is only moderately changed. The effect on the metal-insulator transition, the low field magnetoresistance and carrier localization is dependent on the substrate, evidencing the effect of the induced defects and strains. (C) 2000 Elsevier Science S.A. All rights reserved.
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