Author  |
Title |
Year |
Publication |
Volume |
Pages |
Luengo, C.A.; Huber, J.G.; Sereni, J.G.; Sweedler, A.R.; Cotignola, J.M.; Maple, M.B. |
Low temperature specific heat of ThU |
1972 |
Solid State Communications |
10 |
459 |
Kim, J.; Haberkorn, N.; Nazaretski, E.; Paula, R. de; Tan, T.; Xi, X.X.; Tajima, T.; Movshovich, R.; Civale, L. |
Strong magnetic field dependence of critical current densities and vortex activation energies in an anisotropic clean MgB2 thin film |
2015 |
Solid State Communications |
204 |
56-60 |
Kim, J.; Haberkorn, N.; Gofryk, K.; Graf, M.J.; Ronning, F.; Sefat, A.S.; Movshovich, R.; Civale, L. |
Superconducting properties in heavily overdoped Ba(Fe0.86Co0.14)2As2 single crystals |
2015 |
Solid State Communications |
201 |
20-24 |
Kaufman, H.L.; de la Cruz, F. |
Fluctuation induced diamagnetism in aluminum |
1971 |
Solid State Communications |
9 |
1729-1732 |
Huber, J.G.; Bulman, J.B.; Sereni, J.G. |
Superconductivity under pressure and low temperature specific heat of ThPr alloys |
1982 |
Solid State Communications |
43 |
925-931 |
Herbsommer, J.A.; Correa, V.F.; Nieva, G.; Pastoriza, H.; Luzuriaga, J. |
Vortex dynamics in Bi2Sr2CaCu2O8+δ single crystals with planar defects |
2001 |
Solid State Communications |
120 |
59-63 |
Haberkorn, N.; Suárez, S.; Bud'ko, S.L.; Canfield, P.C. |
Strong pinning and slow flux creep relaxation in Co-doped CaFe2As2 single crystals |
2020 |
Solid State Communications |
318 |
113963 |
Guimpel, J.; de la Cruz, F. |
Electrical resistivity of amorphous Zr70Cu30 and the Kondo like model |
1982 |
Solid State Communications |
44 |
1045-1046 |
Grigera, S.A.; Morré, E.; Osquiguil, E.; Nieva, G.; De la Cruz, F. |
Nonlocal transport properties and size effects in heavily twinned YBa2Cu3O7-delta single crystals |
1998 |
Solid State Communications |
107 |
335-339 |
Giriat, G.; Ren, Z.; Pedrazzini, P.; Jaccard, D. |
High pressure investigation of superconducting signatures in CeCu2Si2: ac-magnetic susceptibility, ac-heat capacity, resistivity and thermopower |
2015 |
Solid State Communications |
209–210 |
55-58 |