The group of spintronic devices is a sub-group of the Magnetic Resonance Division with more than 20 years of formation. The group initiated its activities in 1996 with the research of spin polarized transport phenomena in manganite thin films. Systems such as LaxSr1-xMnO3 or CaMnO3 were initially fabricated for the study of the colossal magnetoresistance phenomena. Further research in this direction allowed the group to fabricate the first manganite-based magnetic tunnel junction of the country with high values of tunnel magnetoresistance. All this background allowed the group to develop not only ferromagnetic-based magnetic tunnel junction but also in the recent years to explore superconductor-based and multiferroic tunnel junctions.
On the other hand, and during the last decade, a new research line in the group has been dedicated to the study of spin-to-charge current conversion in 3D systems. Since 2012 the generation and detection of pure spin currents via spin pumping and the inverse spin Hall effect in metallic-ferromagnetic bilayers and multilayers systems have been studied to estimate microscopic parameters related to the transport properties such as, the spin diffusion length, spin Hall angle, and the spin mixing conductance. One of the main achievements of the spintronic devices group include the control of the magnitude, sign and polarization direction of spin current using synthetic antiferromagnets and metal-ferromagnetic systems grown on ferroelectric substrates.
Areas of impact of the research group
– Ferromagnetic-, superconductor- and ferroelectric-based magnetic tunnel junctions
– Materials for spintronics
– Generation and control of spin currents
– Spin-to-charge current conversion in 3D systems
– Control of spin currents with synthetic antiferromagnets and ferroelectrics
– Multiferroic heterostructures