Research |
We are involved in theoretical research in condensed matter physics along the following main working lines: |
Nanostructured electronic systems
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Statistical physics and condensed matter
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Devices and applications
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Motivated by its potential technological application in post-silicon electronic memory devices, the resistance switching effect (RS) in transition metal oxides (TMO) is attracting a great deal of attention. This effect is a reversible and nonvolatile change in the resistance of a metal-TMO-metal cell, after the application of electrical (voltage or current) pulses. It has been observed in a plethora of systems, ranging from cells containing simple to complex oxides, though each one showing specific characteristics. However the physical origin of the RS effect remains elusive. The goals of the present research project are: This research line pursues advances in the understanding, theoretical modeling and design of semiconductor devices of technological interest as quantum cascade lasers. It involves a close cooperation with experimentalists working in the soon to be installed molecular beam epitaxy facilities at the Centro Atómico Bariloche. |
Realistic modeling of materials
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Our group interacts actively with experimental groups of the Comisión Nacional de Energía Atómica in particular of the Centro Atómico Bariloche, collaborating with them in the interpretation of experiments and performing calculations directly aimed to explain the experimental results.